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US 2023/0143396 A1Published application
Bipolar transistor with collector contact
AssigneeGlobalFoundries U.S. Inc.
InventorsHong Yu, Vibhor Jain
Life of this patent
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor with a collector contact and methods of manufacture. The structure includes: a lateral bipolar transistor which includes an emitter, a base and a collector; an emitter contact to the emitter; a base contact to the base; and a collector contact to the collector and extending to an underlying substrate underneath the collector.
Claims20
A structure comprising:
- a lateral bipolar transistor comprising an emitter, a base and a collector;
- an emitter contact to the emitter;
- a base contact to the base;
- and
- a collector contact to the collector and extending to an underlying substrate underneath the collector.
2 more elements
A structure comprising:
- a substrate comprising a handle substrate, an insulator material on the handle substrate and a semiconductor material on the insulator material;
- a lateral bipolar transistor comprising a collector, an emitter and a base;
- an emitter contact to the emitter;
- a base contact to the base;
- and
- a collector contact to the collector and extending to the handle substrate, through the insulator material and the semiconductor material.
3 more elements
A method comprising:
- forming a lateral bipolar transistor comprising an emitter, a base and a collector;
- forming an emitter contact to the emitter;
- forming a base contact to the base;
- and
- forming a collector contact to the collector and extending to an underlying substrate underneath the collector.
2 more elements
Dependencies are inferred from the claim text.