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US 2023/0143124 A1Published application
Capacitor, method of fabricating the capacitor, and electronic device including the capacitor
AssigneesSamsung Electronics Co., Ltd., Ajou University Industry-Academic Cooperation Foundation
InventorsChangsoo LEE, Sangwoon LEE, Yongsung KIM, Jinhong KIM, Hyungjun KIM, Jooho LEE
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Abstract
A capacitor includes a lower electrode including a perovskite material, an upper electrode spaced apart from the lower electrode, a dielectric layer positioned between the lower electrode and the upper electrode and including a perovskite material, and a passivation layer positioned between the lower electrode and the dielectric layer and including SrxTiyO3 in which a content of Ti is greater than a content of Sr.
Claims20
A capacitor comprising:
- a lower electrode comprising a perovskite material;
- an upper electrode spaced apart from the lower electrode;
- a dielectric layer between the lower electrode and the upper electrode and comprising a perovskite material;
- and
- a passivation layer between the lower electrode and the dielectric layer and comprising SrxTiyO3 in which a content of Ti is greater than a content of Sr.
2 more elements
A method of fabricating a capacitor, the method comprising:
- forming a lower electrode on a substrate, the lower electrode comprising a perovskite material;
- forming a passivation layer on the lower electrode by using a first gas comprising Ti, a second gas comprising a hydroxyl group (OH), a third gas comprising an oxygen radical (O), and a fourth gas comprising Sr, wherein the passivation layer comprises SrxTiyO3 in a perovskite material structure, wherein a concentration of Ti is greater than a concentration of Sr;
- forming a dielectric layer comprising a perovskite material on the passivation layer;
- and
- forming an upper electrode on the dielectric layer.
2 more elements
Dependencies are inferred from the claim text.