Substrate processing apparatus and method of manufacturing semiconductor device using the same

A substrate processing apparatus comprising:

• a lower electrode assembly;
• an upper electrode assembly on the lower electrode assembly;
• and
• a plasma processing region between the lower electrode assembly and the upper electrode assembly,
• wherein the lower electrode assembly includes:
• a substrate support configured to support a substrate;
• a coupling ring assembly surrounding the substrate support;
• an edge ring on the coupling ring assembly;
• and
• at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive,
• wherein the coupling ring assembly includes:
• a coupling ring;
• and
• a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.

A method of manufacturing a semiconductor device, the method comprising:

• preparing a substrate processing apparatus including a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly, wherein the lower electrode assembly of the substrate processing apparatus includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one conductive upper contact pad contacting at least one of the substrate support and the coupling ring assembly, while contacting a lower surface of the edge ring, and the coupling ring assembly includes a conductive side contact pad contacting a side surface of the substrate support and the coupling ring assembly and contacting an inner surface of the coupling ring assembly;
• loading the substrate onto the substrate support in the substrate processing apparatus;
• generating plasma in the plasma processing region to form a plasma region;
• and
• performing plasma processing, while heat generated in the plasma processing region on the edge ring is dissipated through the edge ring, the at least one upper contact pad, the coupling ring assembly, the side contact pad, and the substrate support of the substrate processing apparatus.