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US 2023/0143041 A1Published application
Semiconductor device with bottom dielectric isolation
AssigneeInternational Business Machines Corporation
InventorsRuilong Xie, Kangguo Cheng, Julien Frougier, CHANRO PARK
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Abstract
A semiconductor device includes a substrate, a first shallow trench isolation (STI) liner disposed above and in contact with the substrate, a bottom dielectric isolation (BDI) region disposed above the substate and in contact with the STI liner, a device channel disposed above the BDI region, and a gate stack disposed above and in contact with the device channel.
Claims20
A semiconductor device comprising:
- a substrate;
- a first shallow trench isolation (STI) liner disposed above and in contact with the substrate;
- a bottom dielectric isolation (BDI) region disposed above the substate and in contact with the STI liner;
- a device channel disposed above the BDI region;
- and
- a gate stack disposed above and in contact with the device channel.
3 more elements
A method of forming a semiconductor device, the method comprising:
- forming a sacrificial layer upon a substrate;
- forming a semiconductor channel upon the sacrificial layer;
- forming a first shallow trench isolation (STI) liner adjacent to the substrate and the sacrificial layer;
- exposing a portion of the sacrificial layer;
- removing at least a portion of the sacrificial layer;
- and
- forming a second STI liner in conjunction with a bottom dielectric isolation layer.
4 more elements
A method of forming a semiconductor device, the method comprising:
- forming a sacrificial layer upon a substrate;
- forming a semiconductor channel upon the sacrificial layer;
- removing a portion of the sacrificial layer;
- forming inner spacers between the substrate and the semiconductor channel;
- forming a channel separation trench;
- removing remaining sacrificial layer;
- forming a bottom dielectric isolation (BDI) and shallow trench isolation (STI) liner;
- and
- forming a channel fin above the BDI.
6 more elements
Dependencies are inferred from the claim text.