Epitaxial oxide device with impact ionization
AssigneeSilanna UV Technologies Pte Ltd
InventorPetar Atanackovic
Life of this patent
Estimating the term…
Abstract
The present disclosure describes epitaxial oxide devices with impact ionization. In some embodiments, a semiconductor device comprises: a first semiconductor layer; a second semiconductor layer coupled to the first semiconductor layer; and a first and a second electrical contact coupled to the second and first semiconductor layers, respectively. The first semiconductor layer can comprise a first epitaxial oxide material with a first bandgap and an impact ionization region. The second semiconductor layer can comprise a second epitaxial oxide material with a second bandgap that is wider than the first bandgap.
Claims28
A semiconductor device, comprising:
- a first semiconductor layer comprising:
- a first epitaxial oxide material, the first epitaxial oxide material comprising a first bandgap;
- and
- an impact ionization region;
- a second semiconductor layer coupled to a first side of the first semiconductor layer, the second semiconductor layer comprising a second epitaxial oxide material, the second epitaxial oxide material comprising a second bandgap that is wider than the first bandgap;
- a first electrical contact coupled to the second semiconductor layer;
- and
- a second electrical contact coupled to the first semiconductor layer.
Dependencies are inferred from the claim text.