Trim free wafer bonding methods and devices

A method, comprising:

• forming a first de-bonding structure on a first carrier wafer;
• bonding a semiconductor device wafer to the first carrier wafer, the first de-bonding structure disposed between the semiconductor device wafer and the first carrier wafer;
• forming a plurality of semiconductor devices in the semiconductor device wafer;
• forming an interconnection layer on the semiconductor device wafer, the interconnection layer including a plurality of conductive interconnection structures electrically coupled to the plurality of semiconductor devices;
• forming a second de-bonding structure on a second carrier wafer;
• bonding the second carrier wafer to the interconnection layer, the second de-bonding structure disposed between the second carrier wafer and the interconnection layer;
• and
• removing the first carrier wafer by removing the first de-bonding structure, the removing the first de-bonding structure including irradiating the first de-bonding structure with laser irradiation.

A method, comprising:

• bonding a device wafer to a first de-bond layer on a first carrier wafer, the device substrate having a first width;
• forming a plurality of transistors at least partially in the device wafer;
• forming an interconnection layer on the device wafer, the interconnection layer including a plurality of conductive structures electrically coupled to the plurality of transistors;
• bonding a second carrier wafer having a second de-bond layer on the device wafer, the device wafer disposed between the first carrier wafer and the second carrier wafer;
• removing the first carrier wafer by removing the first de-bond layer, wherein a width of the device wafer remains the first width after removing the first carrier wafer.