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US 2023/0142899 A1Published application
Thin-film deposition method and system
AssigneeASM IP Holding B.V.
InventorsShinya Ueda, SeokJae Oh, HyunGyu Jang, HeeSung Kang, WanGyu Lim, HyounMo Choi, YoungJae Kim
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Abstract
A method and system for forming a film on a substrate are disclosed. Exemplary methods include using a first plasma condition to form a layer of deposited material having a good film thickness uniformity, using a second plasma condition to treat the deposited material and thereby form treated material, and using a third plasma condition to form a surface-modified layer—e.g., reactive sites on the treated material.
Claims23
A method of forming a film on a substrate, the method comprising:
- loading a substrate within a reaction chamber of a reactor;
- providing a first gas within the reaction chamber for a first gas pulse period;
- providing a second gas within the reaction chamber;
- using a first plasma condition, forming first activated species using the second gas to thereby form a layer of deposited material;
- using a second plasma condition, forming second activated species using the second gas to thereby form a treated layer;
- and
- using a third plasma condition, forming activated species using a third gas to thereby form a surface-modified layer,
- wherein the first plasma condition and the second plasma condition differ.
5 more elements
A system comprising:
- a reactor comprising a reaction chamber and an electrode;
- and
- a controller configured to provide a first plasma power to the electrode during a deposition step, provide a second plasma power during a treatment step, and provide a third plasma power during a surface modification step.
Dependencies are inferred from the claim text.