Semiconductor device and method for manufacturing the same
AssigneeHitachi, Ltd.
InventorsHaruka SHIMIZU, Hiromi SHIMAZU
Life of this patent
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Abstract
An accelerated test for applying a high voltage is performed without reducing a manufacturing yield of a semiconductor device using a wide gap semiconductor material. The technical idea in the embodiment is, for example, an idea of performing the accelerated test in the state of a semiconductor wafer to distinguish a latent defect as illustrated in FIG. 4. That is, the technical idea in the embodiment is to perform the accelerated test on a semiconductor chip containing a wide bandgap semiconductor material as a main component not in the state of a semiconductor chip but in the state of the semiconductor wafer.
Claims15
A method for manufacturing a semiconductor device, the method comprising a step of performing an accelerated test on each of a plurality of chip regions in a state of a semiconductor wafer containing, as a main component, a wide bandgap semiconductor material having a bandgap larger than that of silicon, and having the plurality of chip regions.
A method for manufacturing a semiconductor device, the method comprising a step of performing an accelerated test on each of a plurality of semiconductor chips in a state where the plurality of semiconductor chips are integrated, each of the semiconductor chips containing, as a main component, a wide bandgap semiconductor material having a bandgap larger than that of silicon.
A semiconductor device including a semiconductor chip containing, as a main component, a wide bandgap semiconductor material having a bandgap larger than that of silicon, the semiconductor chip comprising:
- a semiconductor substrate;
- a semiconductor element formed on the semiconductor substrate;
- a front electrode formed on a front surface of the semiconductor substrate;
- a back electrode formed on a back surface of the semiconductor substrate;
- and
- a stepped portion formed between the front surface and a side surface of the semiconductor substrate;
- and
- the semiconductor device further includes:
- a sealing material that covers the stepped portion;
- and
- a first conductor bonded to the front electrode.
Dependencies are inferred from the claim text.