Euv light generation apparatus, electronic device manufacturing method, and inspection method
AssigneeGigaphoton Inc.
InventorsFumio IWAMOTO, Yutaka SHIRAISHI
Life of this patent
Estimating the term…
Abstract
An EUV light generation apparatus to generate EUV light by irradiating a target with pulse laser light to turn the target into plasma includes a chamber, a target supply unit configured to supply the target to a plasma generation region in the chamber, a pulse laser device configured to generate pulse laser light to be radiated to the target, and a processor configured to change a generation frequency of the target generated by the target supply unit to a natural number multiple of an irradiation frequency of the pulse laser light based on a size of the target or related information related to the size of the target.
Claims20
An EUV light generation apparatus configured to generate EUV light by irradiating a target with pulse laser light to turn the target into plasma, the EUV light generation apparatus comprising:
- a chamber;
- a target supply unit configured to supply the target to a plasma generation region in the chamber;
- a pulse laser device configured to generate pulse laser light to be radiated to the target;
- and
- a processor configured to change a generation frequency of the target generated by the target supply unit to a natural number multiple of an irradiation frequency of the pulse laser light based on a size of the target or related information related to the size of the target.
An electronic device manufacturing method, comprising:
- generating EUV light as turning a target into plasma by irradiating the target with pulse laser light using an EUV light generation apparatus,
- outputting the EUV light to an exposure apparatus;
- and
- exposing a photosensitive substrate to the EUV light in the exposure apparatus to manufacture an electronic device,
- the EUV light generation apparatus, including:
- a chamber;
- a target supply unit configured to supply the target to a plasma generation region in the chamber;
- a pulse laser device configured to generate the pulse laser light to be radiated to the target;
- and
- a processor configured to change a generation frequency of the target to a natural number multiple of an irradiation frequency of the pulse laser light based on a size of the target.
An inspection method, comprising:
- generating EUV light as turning a target into plasma by irradiating the target with pulse laser light using an EUV light generation apparatus,
- outputting the EUV light to an inspection apparatus as a light source for inspection;
- and
- exposing a mask to the EUV light to inspect the mask in the inspection apparatus,
- the EUV light generation apparatus, including:
- a chamber;
- a target supply unit configured to supply the target to a plasma generation region in the chamber;
- a pulse laser device configured to generate the pulse laser light to be radiated to the target;
- and
- a processor configured to change a generation frequency of the target to a natural number multiple of an irradiation frequency of the pulse laser light based on a size of the target.
Dependencies are inferred from the claim text.