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US 2023/0142787 A1Published application
Negative tone photoresist for euv lithography
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLi-Po YANG, Wei-Han LAI, Ching-Yu CHANG
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Abstract
A negative tone photoresist and method for developing the negative tone photoresist is disclosed. For example, the negative tone photoresist includes a solvent, a dissolution inhibitor, and a polymer. The polymer includes a hydroxyl group. The polymer may be greater than 40 weight per cent of a total weight of the negative tone photoresist.
Claims20
A method of manufacturing semiconductor device, comprising:
- forming a photoresist on a semiconductor substrate, wherein the photoresist is prepared from materials consisting of:
- a photo acid generator (PAG) as a base resin and comprising an acid labile group (ALG), wherein the PAG comprises 40 weight percent (wt %) to 60 wt % of a total solid weight of the negative tone photoresist;
- an organic solvent;
- and
- a dissolution inhibitor;
- exposing the photoresist;
- developing the photoresist to form a pattern in the photoresist;
- transferring the pattern in the photoresist to the semiconductor substrate using etching;
- and
- stripping off the photoresist.
7 more elements
A negative tone photoresist prepared from materials consisting of:
- a photoresist polymer as a base resin and configured to provide a cross linker site upon an exposure;
- a cross-linkable compound, wherein the cross-linkable compound comprises greater than 5 weight percent (wt %) of a total solid weight of the negative tone photoresist;
- and
- an organic solvent.
1 more element
A negative tone photoresist prepared from materials consisting of:
- a polymer selected from a group consisting of formulae (I), (II) and (III):
- a cross-linkable compound, wherein the polymer has a weight percentage of a total solid weight of the negative tone photoresist greater than a weight percentage of the cross-linkable compound of a total solid weight of the negative tone photoresist;
- and
- an organic solvent.
1 more element
Dependencies are inferred from the claim text.