Semiconductor device manufacturing method

A method for manufacturing a semiconductor device, the method comprising:

• forming a gap fill insulating layer on a titanium nitride layer;
• etching the gap fill insulating layer to form a first gap fill insulating pattern and a second gap fill insulating pattern, the first gap fill insulating pattern comprising a first surface facing the second gap fill insulating pattern, and the second gap fill insulating pattern comprising a second surface facing the first surface, wherein the first gap fill insulating pattern and the second gap fill insulating pattern expose an upper surface of the titanium nitride layer;
• forming a first inhibitor layer on the upper surface of the titanium nitride layer;
• forming a second inhibitor layer on the first surface and the second surface;
• selectively removing the second inhibitor layer using a heat treatment process to expose the first surface and the second surface;
• and
• depositing an interest layer on the first surface and the second surface,
• wherein the interest layer exposes the first inhibitor layer.

A method for manufacturing a semiconductor device, the method comprising:

• forming a first sheet pattern on a first region of a substrate;
• forming a second sheet pattern on a second region of the substrate;
• forming a work function metal layer on the substrate, wherein the work function metal layer extends around the first sheet pattern and the second sheet pattern;
• forming a sacrificial layer on the first and second sheet patterns;
• forming a trench that penetrates the sacrificial layer between the first sheet pattern and the second sheet pattern, wherein the trench exposes a portion of the work function metal layer;
• forming an inhibitor layer on a bottom surface and a side surface of the trench;
• performing a heat treatment process to selectively remove the inhibitor layer from the side surface of the trench;
• and
• selectively forming an interest layer on the side surface of the trench,
• wherein the work function metal layer comprises titanium nitride.