Stacked electronic devices

A stacked electronic structure comprising:

• a first bonded structure including a first semiconductor die bonded to a second semiconductor die, each of the first and second semiconductor dies including a front side with active circuitry, a back side opposite the front side, and a side edge between the front and back sides, the respective side edges of the first and second semiconductor dies being flush with one another to define a first side edge of the first bonded structure;
• and
• a second bonded structure stacked on and electrically connected to the first bonded structure, the second bonded structure including a third semiconductor die bonded to a fourth semiconductor die, each of the third and fourth semiconductor dies including a front side with active circuitry, a back side opposite the front side, and a side edge between the front and back sides, the respective side edges of the third and fourth semiconductor dies being flush with one another to define a second side edge of the second bonded structure,
• wherein the first side edge of the first bonded structure has a lateral misalignment relative to the second side edge of the second bonded structure.

A stacked electronic structure comprising:

• a first bonded structure including a first semiconductor die bonded to a second semiconductor die, each of the first and second semiconductor dies including a front side having active circuitry and a plurality of contact pads, a back side opposite the front side, and a plurality of through-substrate vias (TSVs) disposed between the plurality of contact pads and the back side;
• and
• a second bonded structure stacked on and electrically connected to the first bonded structure along a bond interface, the second bonded structure including a third semiconductor die bonded to a fourth semiconductor die, each of the third and fourth semiconductor dies including a front side having active circuitry and a plurality of contact pads, a back side opposite the front side, and a plurality of through-substrate vias (TSVs) disposed between the plurality of contact pads and the back side,
• wherein a neutral axis of the stacked electronic structure is vertically offset from the bond interface by no more than 15% of a thickness of the stacked first and second bonded structures.