US 2023/0142636 A1 · POWER SWITCH CIRCUIT AND NON-VOLATILE MEMORY DEVICE COMPRISING THE SAME

Abstract

A power switch circuit and non-volatile memory device including the same are provided. The power switch circuit includes a multi-voltage providing circuit configured to receive a first voltage and a second voltage greater than the first voltage, output a third voltage corresponding to the first voltage to a first output terminal, and output a fourth voltage corresponding to the second voltage to a second output terminal. The power switch circuit also includes a leakage current prevention circuit configured to cut off a leakage current flowing through the multi-voltage providing circuit. The multi-voltage providing circuit includes a first inverter which is driven using the second voltage. The leakage current prevention circuit is configured to cut off the leakage current flowing through the first inverter in response to both the first voltage and the second voltage being provided to the multi-voltage providing circuit.

Claims20

Dependent claims

A power switch circuit comprising:

a multi-voltage providing circuit configured to receive a first voltage and a second voltage greater than the first voltage, output a third voltage corresponding to the first voltage to a first output terminal, and output a fourth voltage corresponding to the second voltage to a second output terminal;
and
a leakage current prevention circuit configured to cut off a leakage current flowing through the multi-voltage providing circuit,
wherein the multi-voltage providing circuit comprises a first inverter which is driven using the second voltage, and
wherein the leakage current prevention circuit is configured to cut off a leakage current flowing through the first inverter in response to both the first voltage and the second voltage being provided to the multi-voltage providing circuit.

2 more elements

A power switch circuit comprising:

a multi-voltage providing circuit configured to receive a first voltage and a second voltage greater than the first voltage, output a third voltage corresponding to the first voltage to a first output terminal, and output a fourth voltage corresponding to the second voltage to a second output terminal, wherein the multi-voltage providing circuit comprises a first inverter which is driven using the second voltage;
and
a leakage current prevention circuit configured to cut off a leakage current flowing through the first inverter using a pull-down resistance value determined based on a voltage level of an input node of the first inverter.

A non-volatile memory device comprising:

a power switch circuit configured to receive a first voltage and a second voltage greater than the first voltage, output a third voltage corresponding to the first voltage to a first output terminal, and output a fourth voltage corresponding to the second voltage to a second output terminal;
and
a voltage generator configured to receive the third voltage through the first output terminal, receive the fourth voltage through the second output terminal, and generate an operating voltage for reading and/or writing data on a memory cell based on the third voltage and the fourth voltage,
wherein the power switch circuit comprises:
a first inverter which is driven using the second voltage, and
a leakage current prevention circuit configured to reduce or inhibit a leakage current flowing through the first inverter using a pull-down resistance value determined based on a voltage level of an input node of the first inverter.

3 more elements

Dependencies are inferred from the claim text.

Power switch circuit and non-volatile memory device comprising the same

Life of this patent

Power switch circuit and non-volatile memory device comprising the same

Life of this patent

Abstract

Claims20