Method and epitaxial oxide device with impact ionization

A light emission device, configured to:

• apply a bias across a first semiconductor layer of the light emission device using a first electrical contact and a second electrical contact, the light emission device comprising:
• the first electrical contact;
• the second electrical contact;
• the first semiconductor layer coupled to the second electrical contact, the first semiconductor layer comprising a first epitaxial oxide material with a first bandgap, and the first semiconductor layer comprising an impact ionization region;
• and
• a second semiconductor layer coupled to the second electrical contact, the second semiconductor layer located between the first semiconductor layer and the first electrical contact, the second semiconductor layer comprising a second epitaxial oxide material with a second bandgap,
• wherein the second bandgap is wider than the first bandgap;
• inject a hot electron, from the first electrical contact, through the second semiconductor layer, and into a conduction band of the first epitaxial oxide material;
• form, from the hot electron, an excess electron-hole pair in the impact ionization region of the first semiconductor layer via impact ionization;
• and
• radiatively recombine the excess electron-hole pair to emit a photon.