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US 2023/0142322 A1Published application
Variable width for rf neighboring stacks
AssigneepSemi Corporation
InventorsShashi SAMAL, Matt ALLISON
Life of this patent
Estimating the term…
Abstract
Devices and methods to manufacture a stack of FET switches in presence of a neighboring stack of FET switches are described. The stack of FET switches is designed or manufactured so that at least its top FET has a width that is smaller than the width of its bottom FET. Other voltage handling configurations and distributions of widths are described.
Claims20
An integrated circuit (IC), comprising
- a first stack comprising stacked FETs proceeding from a bottom FET of the first stack to a top FET of the first stack;
- and
- a second stack comprising stacked FETs proceeding from a bottom FET of the second switch stack to a top FET of the second stack, the second stack neighboring the first stack, wherein
- each FET of the first stack or the second stack has a FET width extending in a top-to-bottom or bottom-to-top direction of the first stack or the second stack, and
- the FET width of the top FET of the first stack is smaller than the FET width of the bottom FET of the first stack.
2 more elements
An integrated circuit (IC), comprising
- a first stack comprising stacked FETs proceeding from a bottom FET of the first stack to a top FET of the first stack;
- and
- a second stack comprising stacked FETs proceeding from a bottom FET of the second switch stack to a top FET of the second stack, the second stack neighboring the first stack, wherein
- each FET of the first stack or the second stack has a FET width extending in a top-to-bottom or bottom-to-top direction of the first stack or the second stack, and
- the FET width of the top FET of the first stack is smaller than the FET width of at least a first lower FET of the first stack.
2 more elements
A method to handle voltage imbalance in a stack of FETs, comprising:
- forming a stack of FETs comprising stacked FETs proceeding from a bottom FET of the stack to a top FET of the stack, each FET of the stack having a FET width extending in a top-to-bottom direction of the stack, wherein the top FET of the stack of FETs has a FET width smaller than the FET width of the bottom FET of the stack of FETs;
- and
- placing the stack of FETs close to a neighboring stack of FETs in a same integrated circuit (IC).
Dependencies are inferred from the claim text.