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AssigneeSamsung Electronics Co., Ltd.
InventorsEUNHYANG PARK, JOONSUC JANG, SE HWAN PARK, JI-SANG LEE
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A flash memory device includes a memory cell array connected with word lines and control logic that performs threshold voltage compensation on the word lines through a data recover read operation. When a word line on which programming is performed after a selected word line is a dummy word line, the control logic performs the threshold voltage compensation on the selected word line based on a result of a data recover read operation of a word line on which programming is performed before the selected word line. When a next word line on which programming is performed after a selected word line is a dummy word line, the control logic performs threshold voltage compensation on the selected word line based on a result of performing the data recover read operation on a previous word line on which programming is performed before the selected word line.
A flash memory device comprising:
A data recover read method of a flash memory device which includes a first word line, a second word line placed on the first word line in a direction perpendicular to a substrate and adjacent to the first word line, and a third word line placed on the second word line in the direction perpendicular to the substrate and adjacent to the second word line, the method comprising:
A data recover read method of a flash memory device which includes a first word line, a second word line placed on the first word line in a direction perpendicular to a substrate and adjacent to the first word line, and a third word line placed on the second word line in the direction perpendicular to the substrate and adjacent to the second word line, the method comprising:
21-35. (canceled)
Dependencies are inferred from the claim text.