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US 2023/0141995 A1Published application
Semiconductor structure and manufacturing method thereof
AssigneeNanya Technology Corporation
InventorsChuan-Lin HSIAO, Wei-Ming LIAO
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Abstract
A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.
Claims18
A semiconductor structure, comprising:
- a substrate having a first top surface and a second top surface, wherein the first top surface of the substrate is implanted by boron to increase a p-type concentration of the first top surface of the substrate;
- a first dielectric layer located on the first top surface of the substrate;
- and
- a second dielectric layer located on the first dielectric layer.
1 more element
A manufacturing method of a semiconductor structure, comprising:
- etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface;
- implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate;
- forming a first dielectric layer on the substrate;
- and
- forming a second dielectric layer on the first dielectric layer.
2 more elements
Dependencies are inferred from the claim text.