Lateral gallium nitride superjunction

A method for forming a high electron mobility transistor, the method comprising:

• obtaining a substrate;
• forming, using an ion implantation process, a buried implant region at least partially within the substrate and extending laterally from a region underlying a source of the transistor to a region between a gate and a drain of the transistor;
• forming a nucleation layer having a crystalline structure presenting a rocking curve with a full width half max below 100 arcseconds;
• forming a channel layer of a first compound semiconductor material on a surface of the nucleation layer, the channel layer having a second crystalline structure presenting a rocking curve with a peak full width half max below 250 arcseconds;
• and
• forming a barrier layer of a second compound semiconductor material on a surface of the channel layer such that a two-dimensional electron gas (2DEG) is formed at a junction between the channel layer and the barrier layer.

A device having a high electron mobility transistor, the device comprising:

• the high electron mobility transistor, the high electron mobility transistor comprising:
• a substrate layer;
• a buried implant region including first and second dopants implanted within the substrate layer, the buried implant region extending laterally from a region underlying a source terminal of the transistor to a region between a gate and drain terminals of the transistor, the buried implant region configured to modulate an electric field between the gate and drain terminals of the transistor;
• a nucleation layer overlying the substrate and the buried implant region;
• a channel layer of a first compound semiconductor material overlying the nucleation layer;
• and
• a barrier layer of a second compound semiconductor material overlying the channel layer and forming a two-dimensional electron gas (2DEG) at a first interface between the channel layer and the barrier layer;
• wherein the channel layer and the nucleation layer are transmorphically grown to have a lattice match at a second interface between the nucleation layer and the channel layer that enables a height of the channel layer and the nucleation layer to be smaller than a threshold vertical distance between the buried implant region and the 2DEG to enable the buried implant region to modulate an electric field between the gate and drain terminals.