Low resistivity dram buried word line stack
AssigneeApplied Materials, Inc.
InventorsYixiong Yang, Jacqueline S. Wrench, Yong Yang, Srinivas Gandikota, Annamalai Lakshmanan, Joung Joo Lee, Feihu Wang, Seshadri Ganguli
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Abstract
Methods for DRAM device with a buried word line are described. The method includes forming a metal cap layer and a molybdenum conductor layer in a feature on a substrate. The method includes depositing the metal cap layer on the substrate by physical vapor deposition (PVD) and depositing the molybdenum conductor layer by atomic layer deposition (ALD) on the metal cap layer.
Claims20
A method of forming a buried word line having a resistance in a range of from 10 μΩ-cm to 20 μΩ-cm, the method comprising:
- depositing a metal cap layer on a substrate by DC physical vapor deposition (PVD), wherein the substrate is exposed to a metal precursor comprising tungsten or molybdenum at a direct current of 35 kW, a bias of 1160 W;
- and
- depositing a molybdenum conductor layer by a thermal atomic layer deposition on the metal cap layer, wherein the metal cap layer is exposed to a molybdenum precursor.
A method of forming a buried word line having a resistance in a range of from 10 μΩ-cm to 20 μΩ-cm, the method comprising:
- depositing a metal cap layer on a substrate by RF physical vapor deposition (PVD), wherein the substrate is exposed to a metal precursor comprising tungsten or molybdenum at a radio frequency of 3 kW, a bias of 50 W and a pressure of 230 mTorr;
- and
- depositing a molybdenum conductor layer by a thermal atomic layer deposition on the metal cap layer, wherein the metal cap layer is exposed to the molybdenum precursor.
A method of forming a buried word line having a resistance in a range of from 10 μΩ-cm to 20 μΩ-cm, the method comprising:
- depositing a metal cap layer on a substrate by RF physical vapor deposition (PVD), wherein the substrate is exposed to a metal precursor comprising molybdenum at a radio frequency of 3 kW, a bias of 50W and a pressure of 100 mTorr;
- and
- depositing a molybdenum conductor layer by a thermal atomic layer deposition on the metal cap layer, wherein the metal cap layer is exposed to the molybdenum precursor.
Dependencies are inferred from the claim text.