Wafer processing method
AssigneeDisco Corporation
InventorTsubasa HIROSE
Life of this patent
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Abstract
A wafer processing method includes a shield tunnel forming step of executing irradiation with a laser beam with a wavelength having transmissibility with respect to a wafer to form shield tunnels each including a fine pore and a modified tube that surrounds the fine pore, and a dividing step of applying an external force to the wafer to divide the wafer into individual device chips. The shield tunnel forming step includes a first shield tunnel forming step of successively forming the shield tunnels in one planned dividing line with interposition of at least intervals corresponding to one shield tunnel, and a second shield tunnel forming step of successively forming the shield tunnels in regions in which the intervals are provided in the planned dividing line.
Claims6
A wafer processing method by which a wafer in which a plurality of devices are formed on a front surface in such a manner as to be marked out by a plurality of planned dividing lines that intersect is divided into individual device chips, the wafer processing method comprising:
- a shield tunnel forming step of executing irradiation with a laser beam with a wavelength having transmissibility with respect to the wafer to form shield tunnels each including a fine pore and a modified tube that surrounds the fine pore;
- and
- a dividing step of applying an external force to the wafer to divide the wafer into the individual device chips after executing the shield tunnel forming step, wherein
- the shield tunnel forming step includes
- a first shield tunnel forming step of successively forming the shield tunnels in one planned dividing line with interposition of at least intervals corresponding to one shield tunnel, and
- a second shield tunnel forming step of successively forming the shield tunnels in regions in which the intervals are provided in the planned dividing line.
Dependencies are inferred from the claim text.