Method for forming polycrystalline silicon film
AssigneeTokyo Electron Limited
InventorsYoshihiro TAKEZAWA, Tatsuya MIYAHARA
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Abstract
A method for forming a polycrystalline silicon film includes forming a first amorphous silicon film having an island shape on a substrate. The method includes forming a second amorphous silicon film, the second amorphous silicon film covering the first amorphous silicon film. The method includes forming a third amorphous silicon film on the second amorphous silicon film. The method includes heating the substrate to a first temperature at which the first amorphous silicon film crystallizes more easily than the second amorphous silicon film. The first amorphous silicon film crystallizes at a temperature lower than that of the second amorphous silicon film.
Claims7
A method for forming a polycrystalline silicon film comprising:
- forming a first amorphous silicon film having an island shape on a substrate;
- forming a second amorphous silicon film, the second amorphous silicon film covering the first amorphous silicon film;
- forming a third amorphous silicon film on the second amorphous silicon film;
- and
- heating the substrate to a first temperature at which the first amorphous silicon film crystallizes more easily than the second amorphous silicon film,
- wherein the first amorphous silicon film crystallizes at a temperature lower than that of the second amorphous silicon film.
Dependencies are inferred from the claim text.