Method of forming semiconductor structure and semiconductor structure

A method of forming a semiconductor structure, wherein the method of forming the semiconductor structure comprises:

• providing an initial structure, wherein the initial structure comprises a substrate and a dielectric layer provided on the substrate, the dielectric layer is provided on a first side of the substrate, and a bottom surface of the dielectric layer is connected to a first side surface of the substrate;
• forming a conductive trench, wherein the conductive trench extends to a second side surface of the substrate from a top surface of the dielectric layer, the conductive trench exposes part of the dielectric layer and part of the substrate, and a distance between a bottom surface of the conductive trench and the second side surface of the substrate is a first spacing;
• forming a conductive hole, wherein the conductive hole extends to the second side surface of the substrate from the top surface of the dielectric layer;
• forming a conductive pillar, wherein the conductive pillar fills the conductive hole;
• forming an inductor structure, wherein the inductor structure fills the conductive trench, and projection of the inductor structure on the substrate is provided as a spiral structure that uses projection of the conductive pillar on the substrate as an inductor center and that surrounds the inductor center;
• and
• forming an inductor lead-out structure, wherein the inductor lead-out structure covers the conductive pillar and the inductor structure that are exposed by the top surface of the dielectric layer.