Semiconductor growth-anneal cycling
AssigneeThe Regents of the University of Michigan
InventorsZetian Mi, David Laleyan, Ping Wang
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Abstract
A method of fabricating a semiconductor device includes providing a substrate, implementing a growth procedure to form a semiconductor layer supported by the substrate, performing an anneal of the semiconductor layer, the anneal being conducted at a higher temperature than the growth procedure, and repeating the growth procedure and the anneal. The anneal is conducted at or above a decomposition temperature for the semiconductor layer.
Claims24
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- implementing a growth procedure to form a semiconductor layer supported by the substrate;
- performing an anneal of the semiconductor layer, wherein the anneal is conducted at a higher temperature than the growth procedure;
- and
- repeating the growth procedure and the anneal;
- wherein the anneal is conducted at or above a decomposition temperature for the semiconductor layer.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- implementing a growth procedure to form a semiconductor layer on the substrate;
- performing an anneal of the semiconductor layer, wherein the anneal is conducted at a higher temperature than the growth procedure;
- and
- repeating the growth procedure and the anneal;
- wherein the anneal is conducted at a temperature at which decomposition of the semiconductor layer occurs.
A method of fabricating a semiconductor device, the method comprising:
- providing a substrate;
- implementing an epitaxial growth procedure to form a semiconductor layer on the substrate;
- performing an anneal of the semiconductor layer, wherein the anneal is conducted at a higher temperature than the epitaxial growth procedure;
- and
- repeating the epitaxial growth procedure and the anneal for multiple cycles;
- wherein the anneal is conducted at a temperature at which decomposition of the semiconductor layer occurs.
Dependencies are inferred from the claim text.