Semiconductor structures and methods of forming the same

A semiconductor structure, comprising:

• at least one gate electrode disposed on a substrate;
• a gate dielectric layer disposed on the gate electrode;
• a channel pattern disposed on the gate dielectric layer;
• a source electrode and a drain electrode disposed on the channel pattern;
• and
• a storage node disposed over and electrically connected to the source electrode,
• wherein a central axis between the source electrode and the drain electrode is shifted from a central axis of the gate electrode.

A method of forming a semiconductor structure, comprising:

• forming first insulation patterns on a substrate;
• forming gate electrodes on the substrate between the first insulation patterns;
• forming a gate dielectric layer on the gate electrodes and the first insulation patterns;
• forming a channel layer on the gate dielectric layer;
• forming an insulation layer on the channel layer;
• patterning the insulation layer and the channel layer to form stacks spaced apart from each other on the gate dielectric layer, wherein each of the stacks comprises a channel pattern and an insulation strip stacked on the channel pattern;
• forming an isolation pattern on the gate dielectric layer to surround each of the stacks;
• patterning the insulation strips to form second insulation patterns spaced apart from each other on each of the channel patterns;
• and
• forming source electrodes and drain patterns on each of the channel patterns and between the insulation patterns, wherein from a top view, each of the drain electrodes is overlapped with one of the first insulation patterns.