Semiconductor element and multiplexer including a plurality of semiconductor elements

A multiplexer comprising a plurality of semiconductor elements connected in parallel to each other, wherein each of the plurality of semiconductor elements comprises:

• a channel layer including a semiconductor material;
• a p-type semiconductor layer and a n-type semiconductor layer that are provided to be apart from each other with the channel layer between the p-type semiconductor layer and the n-type semiconductor layer;
• a paraelectric layer on a first area of the channel layer;
• a ferroelectric layer on a second area that is different from the first area of the channel layer, and configured to have a polarization state according to a voltage applied from an outside;
• a first gate electrode on the paraelectric layer;
• a second gate electrode on the ferroelectric layer;
• and
• an insulating layer between the first gate electrode and the second gate electrode, and electrically separates the first gate electrode and the second gate electrode from each other, wherein
• the p-type semiconductor layers respectively included in the plurality of semiconductor elements operate as a plurality of first input terminals of the multiplexer,
• the first gate electrodes respectively included in the plurality of semiconductor elements operate as a plurality of second input terminals of the multiplexer, and
• the n-type semiconductor layers respectively included in the plurality of semiconductor elements are connected in parallel to each other, and operate as a single output terminal of the multiplexer.