Semiconductor device with mim capacitor and method for manufacturing same

A method for manufacturing a semiconductor metal-insulator-metal (MIM) capacitor device, comprising:

• providing a substrate, wherein an MIM-capacitor region and a non-MIM-capacitor region are defined on the substrate;
• forming a bottom electrode layer and a first dielectric layer sequentially on the substrate, wherein the bottom electrode layer and the first dielectric layer are both disposed in the MIM-capacitor region and the non-MIM-capacitor region;
• performing patterning by applying a first mask in the first dielectric layer to form a through hole of MIM-capacitor and through holes for conductive-plugs, wherein the through hole of MIM-capacitor is disposed in the MIM-capacitor region, wherein the through holes for the conductive-plugs are disposed in the non-MIM-capacitor region, wherein and the bottom electrode layer is partially exposed by the through hole of MIM-capacitor and the through holes for the conductive-plugs;
• forming an interconnection metal layer and a second dielectric layer sequentially, wherein the interconnection metal layer comprises a first portion and a second portion, wherein the first portion of the interconnection metal layer is disposed on a surface of the through hole of MIM-capacitor, wherein the second portion of the interconnection metal layer fills the through holes for the conductive-plugs, and wherein the second dielectric layer is disposed on a surface of the interconnection metal layer;
• performing a surface planarization treatment to remove the interconnection metal layer and the second dielectric layer that are outside the through hole of MIM-capacitor and the through holes for the conductive plugs;
• and
• forming an upper metal layer and patterning the upper metal layer by using a second mask, wherein the patterned upper metal layer comprises a first portion and a second portion, wherein the first portion of the upper metal layer is disposed on a surface of the second dielectric layer, and the second portion of the upper metal layer is disposed on surfaces of the conductive plugs, wherein the first portion of the interconnection metal layer, the second dielectric layer, and the first portion of the upper metal layer constitute the MIM capacitor, and wherein the first portion of the upper metal layer and the second portion of the upper metal layer are electrically isolated from each other.