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US 2023/0140914 A1Published application
Method for manufacturing semiconductor element, semiconductor element body, and semiconductor element substrate
AssigneeKYOCERA Corporation
InventorsKatsuaki MASAKI, Masahiro ARAKI
Life of this patent
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Abstract
A method of manufacturing a semiconductor element includes: forming a first semiconductor layer (SL1) and a second semiconductor layer (SL2) larger in thickness than the first semiconductor layer (SL1) on a mask layer (ML) including a first opening portion (K1) and a second opening portion (K2); forming a first device layer (DL1) and a second device layer (DL2); and bonding the first device layer (DL1) and the second device layer (DL2) to a support substrate (SK).
Claims27
1-5. (canceled)
A method for manufacturing a semiconductor element substrate, the method comprising:
- preparing an underlying substrate on a surface of which a mask layer is disposed, the mask layer including a first opening portion and a second opening portion adjacent to each other in a first direction;
- and
- forming on the underlying substrate a first semiconductor layer overlapping the first opening portion in plan view and a second semiconductor layer overlapping the second opening portion in plan view and being larger in thickness than the first semiconductor layer.
A semiconductor element substrate comprising:
- a first semiconductor layer;
- a second semiconductor layer located to be separated from the first semiconductor layer;
- and
- an underlying substrate connected to the first and second semiconductor layers;
- wherein
- the first and second semiconductor layers each contain a nitride semiconductor and
- a thickness of the second semiconductor layer is larger than a thickness of the first semiconductor layer.
4 more elements
Dependencies are inferred from the claim text.