Semiconductor device and method for fabricating the same

A method for fabricating a semiconductor device, comprising:

• forming a memory cell over a memory region of a substrate, wherein the memory cell comprises a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element;
• depositing a first dielectric layer over the memory cell, wherein the first dielectric layer has a first portion over a top surface of the top electrode of the memory cell;
• etching back the first dielectric layer, wherein the first portion of the first dielectric layer remains over the top surface of the top electrode of the memory cell after etching back the first dielectric layer;
• depositing a second dielectric layer over the first portion of the first dielectric layer after etching back the first dielectric layer;
• and
• forming a conductive feature in the first and second dielectric layers and connected with the top electrode of the memory cell.

A semiconductor device, comprising:

• a substrate;
• first and second memory cells over the substrate, wherein each of the first and second memory cells comprises a bottom electrode, a resistance switching element over the bottom electrode, and a top electrode over the resistance switching element;
• a first dielectric layer surrounding the first and second memory cells, wherein the first dielectric layer has a void between the first and second memory cells, a bottom of the void has a first edge portion, a second edge portion, and a middle portion between the first and second edge portions, and the middle portion is higher than the first and second edge portions;
• a second dielectric layer over the first dielectric layer;
• and
• first and second conductive features in the first and second dielectric layers and respectively connected to the top electrode of the first memory cell and the top electrode of the second memory cell.