Silicon carbide wafer and method of manufacturing same

A method of manufacturing a silicon carbide wafer, comprising:

• manufacturing a silicon carbide ingot;
• slicing the silicon carbide ingot;
• and
• polishing the sliced upper surface and lower surface,
• wherein the polished upper surface comprises a first target region, the first target region being within 85% of a radius of the upper surface based on a center of the upper surface,
• wherein, in the first target region, a first peak omega angle in a rocking curve measured at intervals of 15 mm in a first direction is within −0.5° to +0.5° based on a peak omega angle in a rocking curve measured at the center of the upper surface,
• wherein the first direction is a [1-100] direction and a direction passing through the center of the upper surface.