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US 2023/0105965 A1Published application
Semiconductor film, manufacturing method for semiconductor film, photodetector element, and image sensor
AssigneeFUJIFILM Corporation
InventorMasashi ONO
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Abstract
There is provided a semiconductor film including an aggregate of semiconductor quantum dots that contain a metal atom and a ligand that is coordinated to the semiconductor quantum dot, in which a half width at half maximum of an exciton absorption peak in optical characteristics of the semiconductor film is 60 nm or less. There are also provided a manufacturing method for a semiconductor film, a photodetector element, and an image sensor.
Claims16
A semiconductor film comprising:
- an aggregate of semiconductor quantum dots that contain a metal atom;
- and
- a ligand that is coordinated to the semiconductor quantum dot,
- wherein a half width at half maximum of an exciton absorption peak in optical characteristics of the semiconductor film is 60 nm or less.
1 more element
Dependencies are inferred from the claim text.