Light source module

A light source module comprising:

• a semiconductor stack portion configured to include a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and a stacked body disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer and including an active layer and a resonance mode forming layer, in which a phase synchronization portion and an intensity modulation portion, which are arranged in a first direction that is one of resonance directions of the resonance mode forming layer, are provided, a portion of the stacked body constituting at least a part of the intensity modulation portion has M (M is an integer of two or more) pixels arranged in a second direction intersecting the first direction, each of the M pixels has N1 (N1 is an integer of two or more) subpixels arranged in the second direction, and a length of a region including consecutive N2 (N2 is an integer of two or more and N1 or less) subpixels among the N1 subpixels, which is defined in the second direction, is smaller than an emission wavelength λ of the active layer;
• a first electrode configured to be electrically connected to a portion of the first conductivity type semiconductor layer constituting at least a part of the phase synchronization portion;
• a second electrode configured to be electrically connected to a portion of the second conductivity type semiconductor layer constituting at least a part of the phase synchronization portion;
• a third electrode configured to be provided in one-to-one correspondence with the N1 subpixels, and electrically connected to one of the portion of the first conductivity type semiconductor layer and the portion of the second conductivity type semiconductor layer which constitute at least a part of the intensity modulation portion;
• and
• a fourth electrode configured to be electrically connected to the other one of the portion of the first conductivity type semiconductor layer and the portion of the second conductivity type semiconductor layer which constitute at least a part of the intensity modulation portion,
• wherein the resonance mode forming layer includes a base layer and a plurality of modified refractive index regions having a refractive index different from a refractive index of the base layer and distributed two-dimensionally on a plane perpendicular to a thickness direction of the resonance mode forming layer,
• an arrangement of the plurality of modified refractive index regions satisfies a condition of an M-point oscillation,
• in a virtual square lattice set on the plane of a portion of the resonance mode forming layer constituting at least a part of the intensity modulation portion, a gravity center of each of the plurality of modified refractive index regions is disposed at a position away from a corresponding lattice point among lattice points of the virtual square lattice and each of the plurality of modified refractive index regions is disposed in any one of a first mode in which an angle of a vector connecting the corresponding lattice point with the gravity center with respect to the virtual square lattice is individually set and a second mode in which the gravity center is disposed on a straight line passing through the corresponding lattice point and inclined with respect to the square lattice, and a distance between the gravity center and the corresponding lattice point is individually set, and
• a distribution of the angle of the vector in the first mode or a distribution of the distance in the second mode satisfies a condition for light to be outputted from the intensity modulation portion in a direction intersecting both the first direction and the second direction.