Back to results
US 2023/0092570 A1Published application
Method for conditioning semiconductor processing chamber components
AssigneeLam Research Corporation
InventorsLin XU, David Joseph WETZEL, John DAUGHERTY, Hong SHIH, Satish SRINIVASAN, Yuanping SONG, Johnny PHAM, Yiwei SONG, Christopher KIMBALL
Life of this patent
Estimating the term…
Abstract
A method for making a component for use in a semiconductor processing chamber is provided. A component body is formed from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K. A metal oxide layer is then disposed over a surface of the component body.
Claims24
A method for making a component for use in a semiconductor processing chamber, comprising:
- forming a component body from a conductive material having a coefficient of thermal expansion of less than 10.0×10−6/K;
- and
- depositing a metal oxide coating on the component body.
A component for use in a semiconductor processing chamber, comprising:
- a component body made of a conductive material having coefficient of thermal expansion of less than 10.0×10−6/K;
- and
- a metal oxide layer disposed over a surface of the component body.
Dependencies are inferred from the claim text.