# US 2023/0069264 A1 · Deposition apparatus, deposition target structure, and method

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- Number: US 2023/0069264 A1
- Document ID: US20230069264A1
- Status: Published application
- Kind: A1
- Application number: 17/461,742
- Filed: 2021-08-30
- Published: 2023-03-02
- Earliest claimed: 2021-08-30
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Chia-Hsi WANG; Yen-Yu CHEN
- Web page: https://patentgrep.com/patent/US20230069264A1

## CPC

- H01J 37/3417: {Arrangements}
- C23C 14/3407: {Cathode assembly for sputtering apparatus, e.g. Target}
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- H01J 37/3423: {Shape}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.

## Claims

### Claim at position 1

1-16. (canceled)

### Claim 17

A method, comprising:
positioning a jig on a backplane structure of a physical vapor deposition target;
positioning a spacer comprising a first material on the backplane structure by guidance of the jig,wherein inner width and length of the jig are substantially equal to width and length of the spacer, respectively;
forming an adhesion structure by embedding the spacer in an adhesion material layer comprising a second material different from the first material; and
attaching a target to the backplane structure by the adhesion structure.

### Claim 18 (depends on 17)

The method of claim 17, wherein attaching the target includes bonding the target to the adhesion structure at a temperature of at least 160° C.

### Claim 19 (depends on 17)

The method of claim 17, wherein forming the adhesion structure by embedding the spacer in the adhesion material layer includes:
forming the adhesion structure by embedding the spacer in the adhesion material layer comprising the second material having lower stiffness than the first material.

### Claim 20 (depends on 17)

The method of claim 17, further comprising:
forming the spacer by a computer numerical control lathe.

### Claim 21 (depends on 17)

The method of claim 17, wherein the minimum distance between the spacer and an outer sidewall of the adhesion material layer is in a range of about 0.1 mm to about 5 mm.

### Claim 22 (depends on 17)

The method of claim 17, wherein a thickness of the spacer is in a range of about 0.1 mm to about 5 mm.

### Claim 23 (depends on 22)

The method of claim 22, wherein a ratio of height of the spacer to the thickness of the spacer is in a range of about 1.1 to about 3.

### Claim 24 (depends on 17)

The method of claim 17, wherein the spacer is in physical contact with the backplane structure and the target.

### Claim 25 (depends on 1)

The method of claim 1, wherein the spacer is the same material as the backplane structure, and a different material than the adhesion material layer.

### Claim 26

A method, comprising:
positioning a jig on a backplane structure of a physical vapor deposition target;
positioning a spacer on the backplane structure by guidance of the jig, wherein inner width and length of the jig are substantially equal to width and length of the spacer, respectively;
forming an adhesion structure by embedding the spacer and the jig in an adhesion material layer;
removing the jig from the adhesion material layer; and
attaching a target to the backplane structure by the adhesion structure with the jig removed.

### Claim 27 (depends on 26)

The method of claim 26, wherein a ratio of the stiffness of the spacer to the stiffness of the adhesion material layer is in a range of about 5 to about 40.

### Claim 28 (depends on 26)

The method of claim 26, wherein the spacer is closed triangular in the plane of the major surface of the backplane structure.

### Claim 29 (depends on 26)

The method of claim 26, wherein the spacer is closed rectangular in the plane of the major surface of the backplane structure.

### Claim 30

A method, comprising:
positioning a jig on a backplane structure of a physical vapor deposition target, the backplane structure having a first machine lock pattern;
positioning a spacer on the backplane structure by guidance of the jig;
forming an adhesion structure by embedding the spacer and the jig in an adhesion material layer;
removing the jig from the adhesion material layer; and
attaching a target to the backplane structure by the adhesion structure with the jig removed, the target having a second machine lock pattern corresponding to the first machine lock pattern.

### Claim 31 (depends on 30)

The method of claim 30, wherein the spacer includes at least three non-crossing lines extending in a first direction, and arranged along a second direction substantially orthogonal to the first direction.

### Claim 32 (depends on 30)

The method of claim 30, wherein a surface of the backplane structure facing the target includes the first machine lock pattern, and the first machine lock pattern includes a first array of pyramid-shaped first peaks and first valleys.

### Claim 33 (depends on 32)

The method of claim 32, wherein a surface of the target facing the backplane structure includes the second machine lock pattern, and the second machine lock pattern includes a second array of pyramid-shaped second peaks and second valleys.

### Claim 34 (depends on 33)

The method of claim 33, wherein the first peaks are aligned with the second valleys, and the second peaks are aligned with the first valleys.

### Claim 35 (depends on 30)

The method of claim 30, wherein the first and second machine lock patterns comprise respective arrays of waves or respective arrays of teeth.

### Claim 36 (depends on 30)

The method of claim 30, wherein the second machine lock pattern includes grooves that align with the spacer.