# US 2023/0069221 A1 · Composition for resist underlayer film formation, and method of producing semiconductor substrate > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2023/0069221 A1 - Document ID: US20230069221A1 - Status: Published application - Kind: A1 - Application number: 17/961,611 - Filed: 2022-10-07 - Published: 2023-03-02 - Earliest claimed: 2020-04-23 - Assignees: Jsr Corporation - Applicants: Jsr Corporation - Inventors: Tomoaki SEKO; Tatsuya Sakai; Kazunori Sakai; Yusuke Anno - Web page: https://patentgrep.com/patent/US20230069221A1 ## CPC - G03F 7/0752: {in non photosensitive layers or as additives, e.g. for dry lithography} - G03F 7/0757: {Macromolecular compounds containing Si-O, Si-C or Si-N bonds (G03F7/0752 takes precedence)} - C08G 77/14: containing silicon bound to oxygen-containing groups - G03F 7/0042: {with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists (G03F7/075 takes precedence)} - G03F 7/2004: {characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light} - G03F 7/322: {Aqueous alkaline compositions} - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ## Abstract A composition for resist underlayer film formation, includes: a polysiloxane compound including a first structural unit represented by formula (1); and a solvent. X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no less than 2, a plurality of Xs are identical or different from each other; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R1s are identical or different from each other, and wherein a sum of a and b is no greater than 3. ## Claims ### Claim 1 A composition for resist underlayer film formation, comprising: a polysiloxane compound comprising a first structural unit represented by formula (1); and a solvent, wherein, in the formula (1), X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no R1ss than 2, a plurality of Xs are identical or different from each other; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein R1 is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, two R1s are identical or different from each other, and wherein a sum of a and b is no greater than 3. ### Claim 2 (depends on 1) The composition according to claim 1, wherein the polysiloxane compound further comprises a second structural unit represented by formula (2): wherein, in the formula (2), R5 represents a halogen atom, a hydroxy group, or a substituted or unsubstituted monovalent alkoxy group having 1 to 20 carbon atoms; and c is an integer of 0 to 3, wherein in a case in which c is no R1ss than 2, a plurality of R5s are identical or different. ### Claim 3 (depends on 1) The composition according to claim 1, wherein a proportion of the first structural unit with respect to total structural units constituting the polysiloxane compound is no R1ss than 1 mol % and no greater than 40 mol %. ### Claim 4 (depends on 1) The composition according to claim 1, wherein the composition is suitable for forming an underlayer film of a metal-containing resist film in lithography with an electron beam or an extreme ultraviolet ray. ### Claim 5 A method of producing a semiconductor substrate, the method comprising: applying a composition for resist underlayer film formation directly or indirectly on a substrate to form a resist underlayer film; applying a composition for metal-containing resist film formation on the resist underlayer film to forcrr a metal-containing resist film; exposing the metal-containing resist film to an electron beam or an extreme ultraviolet ray; and developing the metal-containing resist film exposed, wherein the composition for resist underlayer film formation comprises: a polysiloxane compound comprising a first structural unit represented by formula (1); and a solvent, wherein, in the formula (1), X represents an organic group comprising at least one structure selected from the group consisting of a hydroxy group, a carbonyl group, and an ether bond; a is an integer of 1 to 3, wherein in a case in which a is no R1ss than 2, a plurality of Xs are identical or different from each other; R1 represents a halogen atom, a hydroxy group, or a monovalent organic group having 1 to 20 carbon atoms, wherein R1 is a group other than X; and b is an integer of 0 to 2, wherein in a case in which b is 2, tA R1s are identical or different from each other, and wherein a sum of a and b is no greater ### Claim 6 (depends on 5) The method according to claim 5, further comprising, before the applying of the composition for resist underlayer film formation; forming an organic underlayer film directly or indirectlyon the substrate. ### Claim 7 (depends on 5) The method according to claim 5, wherein the polysiloxane compound further comprises a second structural unit represented by formula (2): wherein, in the formula (2), R5 represents a halogen atom, a hydroxy group, or a substituted or unsubstituted monovalent alkoxy group having 1 to 20 carbon atoms; and c is an integer of 0 to 3, wherein in a case in which c is no R1ss than 2, a plurality of R5s are identical or different. ### Claim 8 (depends on 5) The method according to claim 5, wherein a proportion of the first structural unit with respect to total structural units constituting the polysiloxane compound is no R1ss than 1 mol % and no greater than 40 mol %. ### Claim 9 (depends on 6) The method according to claim 6, wherein the polysiloxane compound further comprises a second structural unit represented by formula (2): wherein, in the formula (2), R5 represents a halogen atom, a hydroxy group, or a substituted or unsubstituted monovalent alkoxy group having 1 to 20 carbon atoms; and c is an integer of 0 to 3, wherein in a case in which c is no R1ss than 2, a plurality of R5s are identical or different. ### Claim 10 (depends on 6) The method according to claim 6, wherein a proportion of the first structural unit with respect to total structural units constituting the polysiloxane compound is no R1ss than 1 mol % and no greater than 40 mol %.