# US 2023/0067918 A1 · Leadframe-less laser direct structuring (lds) package > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2023/0067918 A1 - Document ID: US20230067918A1 - Status: Published application - Kind: A1 - Application number: 17/463,140 - Filed: 2021-08-31 - Published: 2023-03-02 - Earliest claimed: 2021-08-31 - Assignees: STMicroelectronics S.r.l. - Applicants: STMICROELECTRONICS S.r.l. - Inventors: Luca GRANDI - Web page: https://patentgrep.com/patent/US20230067918A1 ## CPC - H10W 20/40: Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes - H10W 74/121: {by multiple encapsulations, e.g. by a thin protective coating and a thick encapsulation} - H10W 20/094: {by transforming insulators into conductors} - H10W 72/50: Bond wires - H10W 74/014: {using batch processing} - H10W 74/111: {the semiconductor body being completely enclosed} - H10W 74/016: {using moulds} - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract The present disclosure is directed to a semiconductor package including a first laser direct structuring (LDS) resin layer and a second LDS resin layer on the first LDS resin layer. Respective surfaces of the first LDS resin layer and the second LDS resin layer are patterned utilizing an LDS process by exposing the respective surfaces to a laser. Patterning the first and second LDS resin layers, respectively, activates additive material present within the first and second LDS resin layers, respectively, converting the additive material from a non-conductive state to a conductive state. The LDS process is followed by a chemical plating step and an electrolytic plating process to form conductive structure coupled to a plurality of die within the first and second LDS resin layers. A molding compound layer is formed on surfaces of the conductive structures and covers the surfaces of the conductive structures. After these steps have been completed, the first LDS resin layer and the second LDS resin layer are singulated along channels filled with conductive material. ## Claims ### Claim 1 A method, comprising: coupling a plurality of die to a first side of a resin wafer that includes a first additive material; forming a resin layer that includes a second additive material on the first side of the resin wafer covering the plurality of die with the resin layer; patterning the resin wafer and the resin layer with a laser including: forming a plurality of first openings extending through the resin layer to ones of the plurality of die; forming a plurality of second openings extending through the resin layer and through the resin wafer to a second side of the resin wafer opposite to the first side; forming a plurality of first recesses extending into the resin layer extending from corresponding ones of the plurality of first openings to corresponding ones of the plurality of second openings; forming a plurality of second recesses extending into the second side of the resin wafer overlapping corresponding ones of the plurality of second openings; forming a boundary recess extending into the second side of the resin wafer surrounding the plurality of second recesses; and forming a plurality of channels extending between corresponding ones of the second recesses and extending to the boundary recesses; forming a first layer of conductive material in the pluralities of first openings, second openings, first recesses, second recesses, and channels, respectively, and in the boundary recess; forming a second layer of conductive material on the first layer of conductive material; and forming a plurality of packages including singulating the resin wafer and the resin layer. ### Claim 2 (depends on 1) The method of claim 1, wherein: forming the plurality of first openings includes activating the second additive material along the plurality of first openings; forming the plurality of second openings includes activating the first and second additive materials along the plurality of second openings; forming the plurality of first recesses includes activating the second additive material along the plurality of first recesses; forming the plurality of second recesses includes activating the first additive material along the plurality of second recesses; forming the boundary recess includes activating the first additive material along the boundary recess; and forming the plurality of channels includes activating the first additive material along the plurality of channels. ### Claim 3 (depends on 2) The method of claim 2, wherein forming the first layer of conductive material includes performing an electroless plating coupling the first layer of conductive material to the first and second additive materials activated along the pluralities of first openings, second openings, first recesses, second recesses, and channels, respectively, and the boundary recess. ### Claim 4 (depends on 3) The method of claim 3, wherein forming the second layer of conductive material includes performing an electroplating coupling the second layer of conductive material to the first layer of conductive material. ### Claim 5 (depends on 1) The method of claim 1, wherein forming the plurality of second recesses extending into the second side of the resin wafer includes forming the plurality of second recesses having a depth less than a thickness of the resin wafer extending from the first side of the resin wafer to the second side of the resin wafer. ### Claim 6 (depends on 1) The method of claim 1, wherein singulating the resin wafer and the resin layer includes: singulating along a first kerf line spaced inwardly from the boundary recess; and singulating along second kerf lines extending along the plurality of channels. ### Claim 7 (depends on 1) The method of claim 1, wherein forming the plurality of packages further includes forming an encapsulant on the resin layer covering the resin layer and respective surfaces of the second layer of conductive material exposed from the resin layer. ### Claim 8 (depends on 7) The method of claim 7, wherein singulating the resin wafer and the resin layer further includes: singulating the encapsulant; and forming respective sidewalls of the resin wafer, the first conductive layer, the encapsulant, and the second conductive layer substantially coplanar with each other. ### Claim 9 (depends on 1) The method of claim 1, further comprising: forming a plurality of die recesses in the first side of the resin wafer, and wherein coupling the plurality of die to the first side of the resin wafer further includes: forming an adhesive in the plurality of die recesses; and disposing each respective one of the plurality of die on the adhesive in a corresponding one of the plurality of die recesses. ### Claim 10 A method, comprising: coupling a plurality of die to a first side of a resin wafer that includes a first additive material; exposing a second side of the resin wafer opposite to the first side to a laser including: forming a boundary recess extending into the second side of the resin wafer activating the first additive material along and within the boundary recess; forming a plurality of recesses extending into the second side of the resin wafer surrounded by the boundary recess and activating the first additive material along and within the recesses; and forming a plurality of channels extending in a first direction extending across corresponding ones of the plurality of recesses and extending from a first portion of the boundary recess extending in a second direction transverse to the first direction to a second portion of the boundary recess extending in the second direction, forming the plurality of channels including activating the first additive material along and within the plurality of channels; and forming a first conductive layer in the boundary recess, the plurality of channels, and the plurality of recesses extending continuously along the plurality of channels and the boundary recess. ### Claim 11 (depends on 10) The method of claim 10, further comprising: forming a resin layer that includes a second additive material on the first side of the resin wafer covering the plurality of die; exposing the resin wafer and the resin layer to the laser forming a plurality of first openings extending through the resin layer and through the resin wafer to the second side of the resin wafer activating the first and second additive material within and along the plurality of first openings; exposing the resin layer to the laser forming a plurality of second openings extending into the resin layer to corresponding ones of the plurality of die activating the second additive material along and within the plurality of second openings; and exposing the resin layer to the laser forming a plurality of troughs extending into the resin layer and extending from corresponding ones of the pluralities of first and second openings activating the second additive material along and within the plurality of troughs. ### Claim 12 (depends on 11) The method of claim 11, wherein forming the first conductive layer further includes forming the first conductive layer in the plurality of first openings, the plurality of second openings, and the plurality of troughs. ### Claim 13 (depends on 12) The method of claim 12, further comprising forming a second conductive layer on the first conductive layer. ### Claim 14 (depends on 13) The method of claim 13, further comprising forming a plurality of packages including: forming an encapsulant on the resin layer covering the resin layer, the first conductive layer, and the second conductive layer with the encapsulant; and forming a plurality of packages by singulating the resin wafer, the first conductive layer, the second conductive layer, the resin layer, and the encapsulant along the plurality of channels. ### Claim 15 A device, comprising: a first layer of resin having a first additive material, the first layer having a first thickness, the first layer having a first surface and a second surface opposite to the first surface; a die on the second surface of the first layer; a second layer of resin having a second additive material on the second surface of the first layer of resin, the second layer covers the die, the second layer having a third surface facing away from the first layer, the second layer having a second thickness extending from the second surface to the third surface; a first lead exposed from the first surface; a first conductive via extending from the first lead to the third surface of the second layer; a second conductive via extending into the third surface to the die; a bus bar extending from the first conductive via to the second conductive via, the bus bar coupling the first conductive via to the second conductive via; and a third layer of resin on the third surface of second layer, the third layer covers respective surfaces of the bus bar, the first conductive via, and the second conductive via, respectively, exposed from the third surface of the second layer, the third layer having a third thickness less than the first thickness and less than the second thickness. ### Claim 16 (depends on 15) The device of claim 15, wherein: the first layer has a first sidewall; the second layer has a second sidewall substantially coplanar with the first sidewall; the third layer has a third sidewall substantially coplanar with the first and second sidewalls, respectively; and the lead has a fourth sidewall substantially coplanar with the first, second, and third sidewalls, respectively. ### Claim 17 (depends on 15) The device of claim 15, wherein the lead has a fourth thickness less than the first thickness of the first layer. ### Claim 18 (depends on 15) The device of claim 15, further comprising a recess extends into second surface of the first layer, an adhesive is within the recess, and the die is on the adhesive within the recess. ### Claim 19 (depends on 15) The device of claim 15, further includes a first conductive layer extends along the first conductive via, the second conductive via, and the bus bar. ### Claim 20 (depends on 19) The device of claim 19, wherein the bus bar includes a second conductive layer on the first conductive layer.