# US 2023/0067598 A1 · Three-dimensional flash memory supporting hole injection erase technique and method for manufacturing same

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- Number: US 2023/0067598 A1
- Document ID: US20230067598A1
- Status: Published application
- Kind: A1
- Application number: 17/789,282
- Filed: 2020-12-24
- Published: 2023-03-02
- Earliest claimed: 2019-12-26
- Assignees: Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Applicants: Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University)
- Inventors: Yun Heub SONG; Sun Jun CHOI
- Web page: https://patentgrep.com/patent/US20230067598A1

## CPC

- G11C 16/16: for erasing blocks, e.g. arrays, words, groups
- H10B 43/27: the channels comprising vertical portions, e.g. U-shaped channels
- G11C 16/0483: {comprising cells having several storage transistors connected in series}
- G11C 16/14: Circuits for erasing electrically, e.g. erase voltage switching circuits
- H10B 43/10: characterised by the top-view layout
- H10D 30/693: {Vertical IGFETs having charge trapping gate insulators}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

Disclosed are a three-dimensional flash memory, which reduces leakage current and supports a hole injection erase technique, and a method for manufacturing same. According to an embodiment, the three-dimensional flash memory comprises: a substrate; a channel layer extending in one direction on the substrate and having the shape of a hollow macaroni; and a P-type filer extending in the one direction while filling the inner space of the channel layer.

## Claims

### Claim 1

A three-dimensional (3D) flash memory, comprising:
a substrate;
a channel layer extending in one direction on the substrate and having a shape of a hollow macaroni; and
a P-type filer extending in the one direction while filling an inner space of the channel layer.

### Claim 2 (depends on 1)

The 3D flash memory of claim 1, wherein the P-type filer supports a hole injection erase technique by supplying a voltage applied from the substrate to an entire area of the channel layer.

### Claim 3 (depends on 1)

The 3D flash memory of claim 1, wherein the P-type filer has a doping concentration for suppressing a leakage current.

### Claim 4 (depends on 3)

The 3D flash memory of claim 3, wherein an interface between the P-type filer and the channel layer has a trap density for suppressing the leakage current.

### Claim 5 (depends on 1)

The 3D flash memory of claim 1, further comprising:
a nitride layer interposed between the channel layer and the P-type filer and configured to block a leakage current of the P-type filer.

### Claim 6 (depends on 5)

The 3D flash memory of claim 5, wherein a thickness of the nitride layer is determined as a value that allows a hole to move between the P-type filer and the channel layer by trap assist tunneling (TAT) of the nitride layer.

### Claim 7 (depends on 1)

The 3D flash memory of claim 1, wherein the channel layer is formed by using a material including at least one of In, Zn, or Ga or a group IV semiconductor material.

### Claim 8 (depends on 1)

The 3D flash memory of claim 1, further comprising:
an oxide-nitride-oxide (ONO) layer surrounding the channel layer and extending in the one direction.

### Claim 9

A method of manufacturing a 3D flash memory, the method comprising:
forming a channel layer having a shape of a hollow macaroni on a substrate so as to be extended in one direction; and
forming a P-type filer in an inner space of the channel layer so as to be extended in the one direction.

### Claim 10 (depends on 9)

The method of claim 9, wherein the forming of the P-type filer includes:
forming the P-type filer, which supports a hole injection erase technique by supplying a voltage applied from the substrate to an entire area of the channel layer, so as to be extended in the one direction.

### Claim 11 (depends on 9)

The method of claim 9, wherein the forming of the P-type filer includes:
forming the P-type filer, which has a doping concentration for suppressing a leakage current, so as to be extended in the one direction.

### Claim 12 (depends on 11)

The method of claim 11, wherein the forming of the P-type filer includes:
forming the P-type filer so as to be extended in the one direction such that an interface between the P-type filer and the channel layer has a trap density for suppressing the leakage current.

### Claim 13 (depends on 9)

The method of claim 9, wherein the forming of the channel layer includes:
forming the channel layer by using a material including at least one of In, Zn, or Ga or a group IV semiconductor material.

### Claim 14

A method of manufacturing a 3D flash memory, the method comprising:
forming a channel layer having a shape of a hollow macaroni on a substrate so as to be extended in one direction;
forming a nitride layer having a shape of a hollow macaroni in an inner space of the channel layer so as to be extended in the one direction; and
forming a P-type filer in an inner space of the nitride layer so as to be extended in the one direction.

### Claim 15 (depends on 14)

The method of claim 14, wherein the forming of the nitride layer includes:
forming the nitride layer for blocking a leakage current of the P-type filer so as to be extended in the one direction.