# US 2023/0067579 A1 · Substrate processing apparatus and method

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- Number: US 2023/0067579 A1
- Document ID: US20230067579A1
- Status: Published application
- Kind: A1
- Application number: 17/790,386
- Filed: 2020-12-21
- Published: 2023-03-02
- Earliest claimed: 2020-01-10
- Assignees: Picosun Oy
- Applicants: Picosun Oy
- Inventors: Väinö KILPI
- Web page: https://patentgrep.com/patent/US20230067579A1

## CPC

- C23C 16/45525: {Atomic layer deposition [ALD]}
- H10P 72/0458: {vertical arrangement}
- C23C 14/00: Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C 16/452: by activating reactive gas streams before {their} introduction into the reaction chamber, e.g. by {ionisation} or addition of reactive species
- C23C 16/45536: {Use of plasma, radiation or electromagnetic fields}
- C23C 16/45544: {characterized by the apparatus}
- C23C 16/45561: {Gas plumbing upstream of the reaction chamber}
- C23C 16/4583: {the substrate being supported substantially horizontally}
- C23C 16/4584: {the substrate being rotated}
- C23C 16/46: characterised by the method used for heating the substrate (C23C16/48, C23C16/50 take precedence)
- C23C 16/511: using microwave discharges
- H01J 37/32192: {Microwave generated discharge (H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence)}
- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/32458: {Vessel}
- H01J 37/32522: {Temperature}
- H01J 37/32596: {Hollow cathodes}
- H01J 37/32807: {Construction (includes replacing parts of the apparatus)}
- H01J 37/32899: {Multiple chambers, e.g. cluster tools}
- H10P 72/0441: {Apparatus for sealing, encapsulating, glassing, decapsulating or the like}
- H10P 72/0432: {mainly by conduction}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A substrate processing apparatus includes an inner chamber formed by an upper portion and a lower portion, a substrate support to support a substrate within the upper portion of the inner chamber, a plasma system to provide the inner chamber with plasma species from the top side of the inner chamber, and an outer chamber surrounding the upper portion of the inner chamber. The lower portion of the inner chamber extends to the outside of the outer chamber and remains uncovered by the outer chamber.

## Claims

### Claim at position 1

1-17. (canceled)

### Claim 18

A substrate processing apparatus, comprising:
an inner chamber;
an outer chamber at least partly surrounding the inner chamber;
a substrate support to support a substrate in the inner chamber;
a lid; and
a plasma generator integrated with the lid.

### Claim 19 (depends on 18)

The apparatus of claim 18, wherein the lid is a movable lid or lid system.

### Claim at position 4

20-34. (canceled)

### Claim 35 (depends on 18)

The substrate processing apparatus of claim 18, wherein the apparatus is configured to discharge non-plasma gas into the inner chamber at point(s) beneath a plasma generation volume of the plasma generator.

### Claim 36 (depends on 35)

The substrate processing apparatus of claim 35, comprising an array of radiation transmitting antennas in the plasma generation volume.

### Claim 37 (depends on 36)

The substrate processing apparatus of claim 36, comprising one or more pipes of non-plasma gas passing through the plasma generation volume.

### Claim 38 (depends on 37)

The substrate processing apparatus of claim 37, wherein the one or more pipes are made of material which the radiation transmitted by the antennas cannot penetrate.

### Claim 39 (depends on 36)

The substrate processing apparatus of claim 36, wherein the antennas are spread horizontally within the plasma generation volume.

### Claim 40 (depends on 36)

The substrate processing apparatus of claim 36, wherein the apparatus is configured to ignite plasma within the plasma generation volume by exposing plasma gas to radiation transmitted by the antennas.

### Claim 41 (depends on 35)

The substrate processing apparatus of claim 35, comprising:
a plurality of plasma in-feed line openings in a roof of the plasma generation volume.

### Claim 42 (depends on 35)

The substrate processing apparatus of claim 35, wherein the plasma generator comprises:
an expansion volume upstream of opening(s) through which plasma gas enters the plasma generation volume, wherein the plasma gas first flows to the expansion volume for spreading before entering the plasma generation volume through said opening(s).

### Claim 43 (depends on 18)

The substrate processing apparatus of claim 18, wherein the plasma generator comprises a microwave plasma generator.

### Claim 44 (depends on 18)

The substrate processing apparatus of claim 18, wherein the lid functions as a lid for both the outer chamber and the inner chamber.

### Claim 45 (depends on 18)

The substrate processing apparatus of claim 18, wherein a power source of the plasma generator is positioned within the apparatus in a position other than the lid.

### Claim 46 (depends on 18)

The substrate processing apparatus of claim 18, wherein the plasma generator comprises a hollow cathode plasma generator.