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US 2023/0067331 A1Published application
Source drain formation in gate all around transistor
AssigneeApplied Materials, Inc.
InventorsAshish Pal, El Mehdi Bazizi, Benjamin Colombeau
Life of this patent
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Abstract
Semiconductor devices and methods of manufacturing the same are described. The method includes forming a bottom dielectric isolation (BDI) layer on a substrate and depositing a template material in the source/drain trench. The template material is etched and then crystallized. Epitaxially growth of the source and drain regions then proceeds, with growth advantageously occurring on the bottom and sidewalls of the source and drain regions.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a superlattice structure on a top surface of a bottom dielectric isolation layer on a substrate, the superlattice structure comprising a plurality of horizontal channel layers and a corresponding plurality of semiconductor material layers alternatingly arranged in a plurality of stacked pairs;
- forming a source trench and a drain trench adjacent to the superlattice structure on the bottom dielectric isolation layer on the substrate;
- depositing a template material in the source trench and in the drain trench;
- crystallizing the template material;
- and
- forming a source region and a drain region.
3 more elements
A method of forming a semiconductor device, the method comprising:
- forming a superlattice structure on a top surface of a bottom dielectric isolation layer on a substrate, the superlattice structure comprising a plurality of horizontal channel layers and a corresponding plurality of semiconductor material layers alternatingly arranged in a plurality of stacked pairs;
- forming a gate structure on a top surface of the superlattice structure;
- forming a dielectric layer on the gate structure and on the superlattice structure;
- forming a source trench and a drain trench adjacent to the superlattice structure on the bottom dielectric isolation layer on the substrate;
- depositing a template material in the source trench and in the drain trench;
- annealing the substrate to crystallize the template material;
- and
- forming a source region and a drain region.
5 more elements
Dependencies are inferred from the claim text.