# US 2023/0066652 A1 · Semiconductor device packaging warpage control

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- Number: US 2023/0066652 A1
- Document ID: US20230066652A1
- Status: Published application
- Kind: A1
- Application number: 17/412,327
- Filed: 2021-08-26
- Published: 2023-03-02
- Earliest claimed: 2021-08-26
- Assignees: NXP USA, Inc.
- Applicants: NXP USA, Inc.
- Inventors: Vivek Gupta; Michael B. Vincent; Scott M. Hayes; Richard Te Gan; Zhiwei Gong
- Web page: https://patentgrep.com/patent/US20230066652A1

## CPC

- H10W 42/121: {protecting against mechanical damage (H10W76/00, H10W74/00 take precedence)}
- H10W 70/027: {Mechanical treatments, e.g. deforming, punching or cutting}
- H10W 70/68: Shapes or dispositions thereof
- H10W 74/014: {using batch processing}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10W 99/00: Subject matter not provided for in other groups of this subclass
- H10P 72/74: {using temporarily an auxiliary support}
- H10P 72/7418: {of passive members, e.g. a chip mounting substrate}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method of manufacturing a carrier for semiconductor device packaging is provided. The method includes forming a carrier having a plurality of plateau regions separated by a plurality of channels. The carrier is configured and arranged to support a plurality of semiconductor die during a packaging operation. The plurality of channels is filled with a material configured to control warpage of the carrier.

## Claims

### Claim 1

A method comprising:
forming a carrier having a plurality of plateau regions separated by a plurality of channels, the carrier configured and arranged to support a plurality of semiconductor die during a packaging operation; and
filling the plurality of channels with a structural material, the structural material configured to control warpage of the carrier.

### Claim 2 (depends on 1)

The method of claim 1, wherein a top surface of the structural material is substantially coplanar with a top surface of the plurality of plateau regions.

### Claim 3 (depends on 1)

The method of claim 1, wherein forming the carrier further comprises removing carrier material to form the plurality of channels.

### Claim 4 (depends on 3)

The method of claim 3, wherein the carrier material is removed by way of etching, sawing, laser ablation, or a combination thereof.

### Claim 5 (depends on 1)

The method of claim 1, wherein forming the carrier further comprises adding material to a base portion of the carrier, the added material configured to form the plurality of plateau regions.

### Claim 6 (depends on 5)

The method of claim 5, wherein the added material comprises a material different from the base portion of the carrier.

### Claim 7 (depends on 1)

The method of claim 1, wherein the structural material has a coefficient of thermal expansion sufficient to maintain a substantially planar condition of the carrier during the packaging operation.

### Claim 8 (depends on 1)

The method of claim 1, wherein the carrier comprises a metal, glass, quartz, or ceramic material.

### Claim 9 (depends on 1)

The method of claim 1, wherein the carrier is further configured for attaching, by way of a releasable adhesive, the plurality of semiconductor die to the plurality of plateau regions during the packaging operation.

### Claim 10

An apparatus for manufacturing a packaged semiconductor device, the apparatus comprising:
a carrier having a plurality of plateau regions separated by a plurality of channels, the carrier configured and arranged to support a plurality of semiconductor die during a packaging operation; and
a structural material disposed in the plurality of channels, the structural material configured to control warpage of the carrier.

### Claim 11 (depends on 10)

The apparatus of claim 10, wherein a top surface of the structural material is substantially coplanar with a top surface of the plurality of plateau regions.

### Claim 12 (depends on 10)

The apparatus of claim 10, wherein the plurality of channels are formed in the carrier by way of etching, sawing, laser ablation, or a combination thereof.

### Claim 13 (depends on 10)

The apparatus of claim 10, wherein the structural material has a coefficient of thermal expansion sufficient to maintain a substantially planar condition of the carrier during the packaging operation.

### Claim 14 (depends on 10)

The apparatus of claim 10, wherein the plurality of plateau regions comprises a material different from a base portion of the carrier.

### Claim 15 (depends on 10)

The apparatus of claim 10, wherein the carrier comprises a metal, glass, quartz, or ceramic material.

### Claim 16

A method comprising:
forming a carrier having a plurality of vertical channels and a plurality of horizontal channels, the plurality of vertical channels and the plurality of horizontal channels configured and arranged to separate a plurality of plateau regions of the carrier; and
filling the plurality of vertical channels and the plurality of horizontal channels with a structural material, the structural material configured to control warpage of the carrier during a packaging operation.

### Claim 17 (depends on 16)

The method of claim 16, wherein the carrier is configured and arranged to support a plurality of semiconductor die during the packaging operation.

### Claim 18 (depends on 16)

The method of claim 16, wherein forming the carrier further comprises removing carrier material by way of etching, sawing, laser ablation, or a combination thereof to form the plurality of vertical channels and the plurality of horizontal channels.

### Claim 19 (depends on 16)

The method of claim 16, wherein a top surface of the structural material is substantially coplanar with a top surface of the plurality of plateau regions.

### Claim 20 (depends on 16)

The method of claim 16, wherein the plurality of plateau regions comprises a material different from a base portion of the carrier.
