# US 2023/0066469 A1 · Asymmetric read sense

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- Number: US 2023/0066469 A1
- Document ID: US20230066469A1
- Status: Published application
- Kind: A1
- Application number: 17/412,158
- Filed: 2021-08-25
- Published: 2023-03-02
- Earliest claimed: 2021-08-25
- Assignees: Western Digital Technologies, Inc.
- Applicants: Western Digital Technologies, Inc.
- Inventors: Jonas GOODE; Richard GALBRAITH; Henry YIP; Vinh HOANG
- Web page: https://patentgrep.com/patent/US20230066469A1

## CPC

- G06F 3/0655: {Vertical data movement, i.e. input-output transfer; data movement between one or more hosts and one or more storage devices}
- G11C 29/028: {with adaption or trimming of parameters}
- G06F 3/0604: {Improving or facilitating administration, e.g. storage management}
- G06F 3/0679: {Non-volatile semiconductor memory device, e.g. flash memory, one time programmable memory [OTP]}
- G06F 11/1012: {using codes or arrangements adapted for a specific type of error (G06F11/1048 takes precedence)}
- G11C 7/06: Sense amplifiers; Associated circuits {, e.g. timing or triggering circuits}
- G11C 11/5642: {Sensing or reading circuits; Data output circuits}
- G11C 29/021: {in voltage or current generators}
- G11C 29/44: Indication or identification of errors, e.g. for repair
- G11C 29/50004: {of threshold voltage}
- G11C 16/26: Sensing or reading circuits; Data output circuits
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A data storage device includes a memory device including a plurality of wordlines, each including a plurality of cells, and a cell statistics generator (CSG) disposed on the memory device. The CSG includes logic configured to receive a first read sense at a threshold voltage of one or more threshold voltages of each cell of a wordline of the plurality of wordlines, determine that a second read sense is required based on the first read sense, receive the second read sense, determine a deviation parameter and a dispersion parameter for an asymmetric adjustment of the left threshold voltage and the right threshold voltage, and adjust the left threshold voltage and the right threshold voltage based on the deviation parameter and the dispersion parameter. The second read sense includes a plurality of left read senses at a left threshold voltage and a plurality of right senses at a right threshold voltage.

## Claims

### Claim 1

A data storage device, comprising:
a memory device comprising a plurality of wordlines, each comprising a plurality of cells; and
a cell statistics generator (CSG) disposed on the memory device, the CSG comprising logic configured to:
receive a first read sense at a threshold voltage of one or more threshold voltages of each cell of a wordline of the plurality of wordlines;
determine that a second read sense is required based on the first read sense, wherein the second read sense comprises a plurality of left senses at a left threshold voltage and a plurality of right senses at a right threshold voltage;
determine a deviation parameter and a dispersion parameter for an asymmetric adjustment of the left threshold voltage and the right threshold voltage; and
adjust the left threshold voltage and the right threshold voltage based on the deviation parameter and the dispersion parameter.

### Claim 2 (depends on 1)

The data storage device of claim 1, wherein the logic is further configured to sum, for the wordline, each of the plurality of left senses and sum, for the wordline, each of the plurality of right senses and subtract an expectation constant from each of the sums.

### Claim 3 (depends on 2)

The data storage device of claim 2, wherein the deviation parameter is a sum of the sum of the plurality of left senses and the sum of the plurality of right senses, and wherein the dispersion parameter is a difference between the sum of the plurality of left senses and the sum of the plurality of right senses.

### Claim 4 (depends on 3)

The data storage device of claim 3, wherein the logic is further configured to, based on the deviation parameter, either:
increase the left threshold voltage and the right threshold voltage; or
decrease the left threshold voltage and the right threshold voltage.

### Claim 5 (depends on 3)

The data storage device of claim 3, wherein the logic is further configured to, based on the dispersion parameter, either:
shift the left threshold voltage and the right threshold voltage closer to the threshold voltage; or
shift the left threshold voltage and the right threshold voltage further from the threshold voltage.

### Claim 6 (depends on 1)

The data storage device of claim 1, wherein the logic is further configured to:
receive the plurality of left senses and the plurality of right senses;
adjust the left threshold voltage and the right threshold voltage by the deviation parameter and the dispersion parameter; and
re-receive the plurality of left senses and the plurality of right senses.

### Claim 7 (depends on 6)

The data storage device of claim 6, wherein the logic is further configured to re-receive the plurality of left senses and the plurality of right senses based on an adjusted left threshold voltage and an adjusted right threshold voltage more than once.

### Claim 8 (depends on 7)

The data storage device of claim 7, wherein the logic is further configured to, upon re-receiving the plurality of left senses and the plurality of right senses:
determine whether further adjusting of the left threshold voltage and the right threshold voltage is needed based on a number of bit flips;
based on determining that further adjusting is needed, re-determine the deviation parameter and the dispersion parameter; and
based on the re-determining, re-adjust the left threshold voltage and the right threshold voltage by the deviation parameter and the dispersion parameter.

### Claim 9

A data storage device, comprising:
a memory device comprising a plurality of wordlines, each comprising a plurality of cells; and
a cell statistics generator (CSG) disposed on the memory device, the CSG comprising logic configured to:
receive a plurality of left read senses and a plurality of right read senses for a threshold voltage of a plurality of threshold voltages for each cell of the plurality of cells of a wordline of the plurality of wordlines;
sum a plurality of received left read senses and a plurality of right read senses, wherein an expectation value is subtracted from the summed plurality of received left read senses and the summed plurality of right read senses;
calculate a deviation parameter and a dispersion parameter; and
asymmetrically adjust the plurality of left read senses and the plurality of right read senses based on the deviation parameter and the dispersion parameter.

### Claim 10 (depends on 9)

The data storage device of claim 9, wherein the CSG comprises a first adder and a second adder, wherein the first adder is configured to sum the plurality of received left read senses and subtract the expectation value from the summed plurality of received left read senses, and wherein the second adder is configured to sum the plurality of received right read senses and subtract the expectation value from the summed plurality of right read senses.

### Claim 11 (depends on 10)

The data storage device of claim 10, wherein the CSG further comprises a third adder and a fourth adder, wherein the third adder is configured to sum a first plurality of results from the first adder, and wherein the fourth adder is configured to sum a second plurality of results from the second adder.

### Claim 12 (depends on 11)

The data storage device of claim 11, wherein the CSG further comprises a first combiner and a second combiner, wherein the first combiner is configured to calculate the deviation parameter, and wherein the second combiner is configured to calculate the dispersion parameter.

### Claim 13 (depends on 12)

The data storage device of claim 12, wherein the deviation parameter is calculated by summing a first sum of the third adder and a second sum of the fourth adder.

### Claim 14 (depends on 12)

The data storage device of claim 12, wherein the dispersion parameter is calculated by subtracting a first sum of the third adder from a second sum of the fourth adder.

### Claim 15 (depends on 9)

The data storage device of claim 9, wherein the logic is configured to adjust a bin spacing of the left read sense and the right read sense based on the dispersion parameter.

### Claim 16 (depends on 9)

The data storage device of claim 9, wherein the logic is configured to subtract a voltage value or adds a voltage value to both the voltage of the left read sense and the voltage of the right read sense based on the deviation parameter.

### Claim 17

A data storage device, comprising:
memory means comprising a plurality of wordlines, each comprising a plurality of cells; and
one or more cell statistics generators (CSGs) disposed on the memory means, the one or more CSGs each comprising logic configured to:
receive a plurality of left read senses at a first voltage from a threshold voltage of each cell of a wordline of the plurality of wordlines, wherein the first voltage is substantially less than the threshold voltage;
receive a plurality of right read senses at a second voltage from the threshold voltage, wherein the second voltage is substantially greater than the threshold voltage, and wherein the first voltage and the second voltage are offset by a substantially equal voltage from the threshold voltage;
determine a deviation parameter and a dispersion parameter to asymmetrically adjust the first voltage and the second voltage; and
adjust the first voltage and the second voltage based on the deviation parameter and the dispersion parameter.

### Claim 18 (depends on 17)

The data storage device of claim 17, wherein the receiving the plurality of left read senses, the receiving the plurality of right read senses, and the determining occurs more than once.

### Claim 19 (depends on 17)

The data storage device of claim 17, wherein the logic is further configured to determine a number of bit flips of the plurality of left read senses and the plurality of right read senses.

### Claim 20 (depends on 19)

The data storage device of claim 19, wherein the logic is further configured to determine a first voltage shift for the left read sense and a second voltage shift for the right read sense upon determining that the number of bit flips of either the plurality of left read senses, the plurality of right read senses, or both the plurality of left read senses and the plurality of right read senses is greater than a threshold value.