# US 2023/0056780 A1 · Split RDL Connection Between Die and UBM

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- Number: US 2023/0056780 A1
- Document ID: US20230056780A1
- Status: Published application
- Kind: A1
- Application number: 17/445,330
- Filed: 2021-08-18
- Published: 2023-02-23
- Earliest claimed: 2021-08-18
- Assignees: STATS ChipPAC Pte. Ltd.
- Applicants: STATS ChipPAC Pte. Ltd.
- Inventors: Jian Zuo; Yaojian Lin
- Web page: https://patentgrep.com/patent/US20230056780A1

## CPC

- H10W 72/20: Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W 72/90: Bond pads, in general
- H10W 72/019: {of bond pads}
- H10W 72/01908: {using permanent auxiliary members, e.g. using alignment marks}
- H10W 72/29: Bond pads specially adapted therefor
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/942: {relative to underlying supporting features, e.g. bond pads, RDLs or vias}
- H10W 72/967: {Multiple bond pads having different functions}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device has a semiconductor die. A first contact pad, second contact pad, and third contact pad are formed over the semiconductor die. An under-bump metallization layer (UBM) is formed over the first contact pad, second contact pad, and third contact pad. The UBM electrically connects the first contact pad to the second contact pad. The third contact pad is electrically isolated from the UBM. Conductive traces can be formed extending between the first contact pad and second contact pad under the UBM. A fourth contact pad can be formed over the first contact pad and a fifth contact pad can be formed over the second contact pad. The UBM is then formed over the fourth and fifth contact pads.

## Claims

### Claim 1

A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a first contact pad over the semiconductor die;
forming a second contact pad over the semiconductor die;
forming a third contact pad over the semiconductor die; and
forming an under-bump metallization layer (UBM) over the first contact pad, second contact pad, and third contact pad, wherein the UBM electrically connects the first contact pad to the second contact pad and the third contact pad is electrically isolated from the UBM.

### Claim 2 (depends on 1)

The method of claim 1, further including forming a conductive trace extending between the first contact pad and second contact pad under the UBM.

### Claim 3 (depends on 1)

The method of claim 1, further including forming an insulating layer over the first contact pad and second contact pad comprising a buffer feature of the insulating layer disposed over the first contact pad.

### Claim 4 (depends on 1)

The method of claim 1, further including:
forming a fourth contact pad over the first contact pad;
forming a fifth contact pad over the second contact pad; and
forming the UBM over the fourth contact pad and fifth contact pad.

### Claim 5 (depends on 4)

The method of claim 4, further including:
forming a first conductive trace between the first contact pad and second contact pad; and
forming a second conductive trace between the fourth contact pad and fifth contact pad.

### Claim 6 (depends on 1)

The method of claim 1, further including forming a buffer conductive layer between the semiconductor die and first contact pad.

### Claim 7

A method of making a semiconductor device, comprising:
providing a semiconductor die;
forming a first contact pad over the semiconductor die;
forming a second contact pad over the semiconductor die; and
forming an under-bump metallization layer (UBM) over the first contact pad and second contact pad.

### Claim 8 (depends on 7)

The method of claim 7, further including forming a conductive trace extending between the first contact pad and second contact pad under the UBM.

### Claim 9 (depends on 7)

The method of claim 7, further including forming an insulating layer over the first contact pad and second contact pad comprising a buffer feature of the insulating layer disposed over the first contact pad.

### Claim 10 (depends on 7)

The method of claim 7, further including:
forming a third contact pad over the first contact pad;
forming a fourth contact pad over the second contact pad; and
forming the UBM over the third contact pad and fourth contact pad.

### Claim 11 (depends on 7)

The method of claim 7, further including forming a buffer conductive layer between the semiconductor die and first contact pad.

### Claim 12 (depends on 7)

The method of claim 7, further including forming a third contact pad under the UBM, wherein the UBM electrically connects the first contact pad to the second contact pad and the third contact pad is electrically isolated from the UBM.

### Claim 13 (depends on 7)

The method of claim 7, further including a solder bump formed over the UBM.

### Claim 14

A semiconductor device, comprising:
a semiconductor die;
a first contact pad formed over the semiconductor die;
a second contact pad formed over the semiconductor die;
a third contact pad formed over the semiconductor die; and
an under-bump metallization layer (UBM) formed over the first contact pad, second contact pad, and third contact pad, wherein the UBM electrically connects the first contact pad to the second contact pad and the third contact pad is electrically isolated from the UBM.

### Claim 15 (depends on 14)

The semiconductor device of claim 14, further including a conductive trace extending between the first contact pad and second contact pad under the UBM.

### Claim 16 (depends on 14)

The semiconductor device of claim 14, further including an insulating layer formed over the first contact pad and second contact pad comprising a buffer feature of the insulating layer disposed over the first contact pad.

### Claim 17 (depends on 14)

The semiconductor device of claim 14, further including:
a fourth contact pad formed over the first contact pad; and
a fifth contact pad formed over the second contact pad, wherein the UBM is formed over the fourth contact pad and fifth contact pad.

### Claim 18 (depends on 17)

The semiconductor device of claim 17, further including:
a first conductive trace formed between the first contact pad and second contact pad; and
a second conductive trace formed between the fourth contact pad and fifth contact pad.

### Claim 19 (depends on 14)

The semiconductor device of claim 14, further including a buffer conductive layer formed between the semiconductor die and first contact pad.

### Claim 20

A semiconductor device, comprising:
a semiconductor die;
a first contact pad formed over the semiconductor die;
a second contact pad formed over the semiconductor die; and
an under-bump metallization layer (UBM) formed over the first contact pad and second contact pad.

### Claim 21 (depends on 20)

The semiconductor device of claim 20, further including a conductive trace extending between the first contact pad and second contact pad under the UBM.

### Claim 22 (depends on 20)

The semiconductor device of claim 20, further including an insulating layer formed over the first contact pad and second contact pad comprising a buffer feature of the insulating layer disposed over the first contact pad.

### Claim 23 (depends on 20)

The semiconductor device of claim 20, further including:
a third contact pad formed over the first contact pad; and
a fourth contact pad formed over the second contact pad, wherein the UBM is formed over the third contact pad and fourth contact pad.

### Claim 24 (depends on 20)

The semiconductor device of claim 20, further including a buffer conductive layer formed between the semiconductor die and first contact pad.

### Claim 25 (depends on 20)

The semiconductor device of claim 20, further including a third contact pad formed under the UBM, wherein the UBM electrically connects the first contact pad to the second contact pad and the third contact pad is electrically isolated from the UBM.