# US 2023/0056697 A1 · Semiconductor device and manufacturing method thereof

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- Number: US 2023/0056697 A1
- Document ID: US20230056697A1
- Status: Published application
- Kind: A1
- Application number: 17/976,306
- Filed: 2022-10-28
- Published: 2023-02-23
- Earliest claimed: 2020-05-11
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.; Tsmc China Company Limited
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.; Tsmc China Company Limited
- Inventors: Zheng-Long CHEN
- Web page: https://patentgrep.com/patent/US20230056697A1

## CPC

- H10D 1/042: {using deposition processes to form electrode extensions}
- H10D 1/716: {having vertical extensions}
- H10D 1/714: {having horizontal extensions}
- H10W 20/031: {of conductive parts of the interconnections}
- H10W 20/496: {Capacitor integral with wiring layers}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method includes forming a dielectric layer on a substrate; forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first spiral path, the second spiral electrode extending in a second spiral path, and the spiral common electrode extending in a third spiral path laterally between the first and second spiral paths.

## Claims

### Claim 1

A method, comprising:
forming a dielectric layer on a substrate; and
forming a first spiral electrode, a second spiral electrode, and a spiral common electrode in the dielectric layer, the first spiral electrode extending in a first spiral path, the second spiral electrode extending in a second spiral path, and the spiral common electrode extending in a third spiral path laterally between the first and second spiral paths.

### Claim 2 (depends on 1)

The method of claim 1, wherein the first and second spiral electrodes and the spiral common electrode form a capacitor with the dielectric layer.

### Claim 3 (depends on 1)

The method of claim 1, wherein the first and second spiral electrodes are anodes, and the spiral common electrode is cathode.

### Claim 4 (depends on 1)

The method of claim 1, wherein the first and second spiral electrodes are cathode, and the spiral common electrode is anode.

### Claim 5 (depends on 1)

The method of claim 1, wherein the first spiral electrode is concentric with the spiral common electrode.

### Claim 6 (depends on 1)

The method of claim 1, wherein the first and second spiral electrodes have a same spiral rotating direction.

### Claim 7 (depends on 1)

The method of claim 1, wherein the first spiral electrode has a spiral Archimedes pattern in a plan view.

### Claim 8 (depends on 1)

The method of claim 1, wherein the second spiral electrode has a spiral hexagonal pattern or a spiral octagonal pattern in a plan view.

### Claim 9 (depends on 1)

The method of claim 1, wherein the first and second spiral electrodes have a substantially equal spacing therebetween along the first spiral path.

### Claim 10 (depends on 1)

The method of claim 1, wherein a first distance from the spiral common electrode to the first spiral electrode is equal to a second distance from the spiral common electrode to the second spiral electrode from a cross sectional view.

### Claim 11

A method, comprising:
forming a first dielectric layer on a substrate;
forming a first spiral cathode electrode in the first dielectric layer;
forming a second dielectric layer over the first dielectric layer; and
forming a first spiral anode electrode in the second dielectric layer, the first spiral anode electrode spaced apart from the first spiral cathode electrode and overlapping the first spiral cathode electrode.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
forming a second spiral anode electrode in the first dielectric layer; and
forming a second spiral cathode electrode in the second dielectric layer, the second spiral cathode electrode spaced apart from the first and second spiral anode electrodes and overlapping the second spiral anode electrode.

### Claim 13 (depends on 11)

The method of claim 11, wherein the first spiral cathode electrode is concentric with the second spiral anode electrode.

### Claim 14 (depends on 11)

The method of claim 11, further comprising:
forming a third dielectric layer sandwiched between the first and second dielectric layers, the first spiral anode electrode being spaced apart from the first spiral cathode electrode by the third dielectric layer.

### Claim 15 (depends on 11)

The method of claim 11, wherein the first spiral cathode electrode and the first spiral anode electrode define a via-free region therebetween.

### Claim 16

A capacitor, comprising:
a first spiral cathode pattern;
a second spiral cathode pattern in a same level height as the first spiral cathode pattern, the second spiral cathode pattern being concentric with the first spiral cathode pattern; and
a first anode pattern laterally between the first and second spiral cathode patterns.

### Claim 17 (depends on 16)

The capacitor of claim 16, wherein the first anode pattern is a spiral pattern.

### Claim 18 (depends on 16)

The capacitor of claim 16, wherein the first and second spiral cathode patterns have a same spiral rotating direction.

### Claim 19 (depends on 16)

The capacitor of claim 16, further comprising:
a third spiral cathode pattern in a different level height than the first and second spiral cathode patterns; and
a second anode pattern in a same level height as the third spiral cathode pattern.

### Claim 20 (depends on 19)

The capacitor of claim 19, further comprising:
a third anode pattern in a same level height as the third spiral cathode pattern, the third spiral cathode pattern laterally between the first and second anode patterns.