# US 2023/0056650 A1 · Micro light emitting diode (led) display device

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- Number: US 2023/0056650 A1
- Document ID: US20230056650A1
- Status: Published application
- Kind: A1
- Application number: 17/977,968
- Filed: 2022-10-31
- Published: 2023-02-23
- Earliest claimed: 2017-12-18
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Seong Hwan JU; Hyeon Ho SON; Jin Yeong KIM; Jung Eun SON; Hanchul PARK; Hyunwoo KIM
- Web page: https://patentgrep.com/patent/US20230056650A1

## CPC

- H10W 90/00: Package configurations
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls
- H10H 29/142: {Two-dimensional arrangements, e.g. asymmetric LED layout}
- H10H 20/825: containing nitrogen, e.g. GaN
- H10H 20/83: Electrodes
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The present disclosure relates to a micro light emitting diode (LED) display device including a substrate having a plurality of thin film transistors thereon; a plurality of micro light emitting devices (LEDs) on an upper surface of the substrate, the micro LEDs each having a protecting film provided with a first contact hole to expose a portion of an upper surface of a corresponding micro LED; at least one insulating layer covering the micro LED, the insulating layer provided with a second contact hole to expose a portion of the upper surface of the corresponding micro LED; and a connection electrode in the first contact hole and the second contact hole configured to transfer signals to the micro LED, wherein the first contact hole is larger than the second contact hole.

## Claims

### Claim 1

A micro light emitting diode (LED) display device, comprising:
a substrate;
a plurality of thin film transistors on the substrate;
a plurality of micro light emitting diodes (LEDs) on an upper surface of the substrate, each of the plurality of micro LEDs including:
a protective film; and
a first contact hole provided in the protective film, wherein the first contact hole exposes a portion of an upper surface of a corresponding micro LED; and
at least one insulating layer covering the micro LEDs, the at least one insulating layer having a second contact hole to expose the portion of the upper surface of the corresponding micro LED;
wherein the first contact hole is larger than the second contact hole, and the second contact hole exposes a partial portion of the first contact hole.

### Claim 2 (depends on 1)

The micro LED display device according to claim 1, wherein the substrate is flexible.

### Claim 3 (depends on 1)

The micro LED display device according to claim 1, wherein the substrate is transparent.

### Claim 4 (depends on 1)

The micro LED display device according to claim 1, wherein the thin film transistor has a structure of a top gate thin film transistor.

### Claim 5 (depends on 1)

The micro LED display device according to claim 1, wherein the thin film transistor is a top gate thin film transistor.

### Claim 6 (depends on 1)

The micro LED display device according to claim 1, wherein the thin film transistor include an semiconductor layer and the semiconductor layer composed of an amorphous semiconductor.

### Claim 7 (depends on 1)

The micro LED display device according to claim 1, wherein the micro LED has a structure of a vertical structure micro LED.