# US 2023/0056511 A1 · Image capture device and method of manufacturing such a device

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- Number: US 2023/0056511 A1
- Document ID: US20230056511A1
- Status: Published application
- Kind: A1
- Application number: 17/888,837
- Filed: 2022-08-16
- Published: 2023-02-23
- Earliest claimed: 2021-08-19
- Assignees: Commissariat A L'energie Atomique Et Aux Energies Alternatives
- Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Inventors: François Templier; Josep Segura Puchades; Fabrice Casset
- Web page: https://patentgrep.com/patent/US20230056511A1

## CPC

- H10K 59/13: comprising photosensors that control luminance
- H10W 90/00: Package configurations
- G09G 3/3208: organic, e.g. using organic light-emitting diodes [OLED]
- H10K 59/00: Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K 59/35: comprising red-green-blue [RGB] subpixels
- H10K 59/60: OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
- H10K 59/65: OLEDs integrated with inorganic image sensors
- G09G 2300/0426: Layout of electrodes and connections
- G09G 2360/144: the light being ambient light
- H10K 59/90: Assemblies of multiple devices comprising at least one organic light-emitting element
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)

## Abstract

A device including: a transfer substrate including electric connection elements; and a plurality of elementary chips bonded and electrically connected to the transfer substrate, each elementary chip including at least one photodetector and an electronic circuit for reading from the at least one photodetector, the device further including, associated with at least one elementary chip, an emission, capture, or actuation element external to the elementary chip, bonded and electrically connected to the transfer substrate, each elementary chip including an electronic circuit for controlling the emission, capture, or actuation element associated with the chip.

## Claims

### Claim 1

Device comprising:
a transfer substrate comprising electric connection elements; and
a plurality of elementary chips bonded and electrically connected to the transfer substrate, each elementary chip comprising at least one photodetector and an electronic circuit for reading from said at least one photodetector,
the device further comprising, associated with at least one elementary chip, an emission, capture, or actuation element external to the elementary chip, bonded and electrically connected to the transfer substrate, each elementary chip comprising an electronic circuit for controlling the emission, capture, or actuation element associated with the chip.

### Claim 2 (depends on 1)

Device according to claim 1, wherein, in each elementary chip, the electronic circuit for reading from said at least one photodetector and the electronic circuit for controlling the emission, capture, or actuation element associated with the chip comprise MOS transistors formed inside and on top of a single-crystal silicon layer.

### Claim 3 (depends on 1)

Device according to claim 1, wherein, in each elementary chip, said at least one photodetector is an inorganic photodetector based on a III-V semiconductor material.

### Claim 4 (depends on 3)

Device according to claim 3, wherein, in each elementary chip, said at least one photodetector comprises an indium gallium arsenide absorption layer.

### Claim 5 (depends on 1)

Device according to claim 1, wherein the emission, capture, or actuation element comprises at least one light-emitting diode.

### Claim 6 (depends on 5)

Device according to claim 5, wherein said at least one light-emitting diode is an organic light-emitting diode.

### Claim 7 (depends on 5)

Device according to claim 5, wherein each emission, capture, or actuation element comprises three light-emitting diodes respectively defining three emission sub-pixels, and wherein each elementary chip comprises a plurality of control sub-circuits adapted to individually controlling respectively the three light-emitting diodes.

### Claim 8 (depends on 7)

Device according to claim 7, wherein the three emission sub-pixels are adapted to respectively emitting in three different wavelength ranges.

### Claim 9 (depends on 7)

Device according to claim 7, wherein, in each elementary chip, the three control sub-circuits are coupled to a same input terminal of the chip, connected to a corresponding connection area of the transfer substrate, intended to sequentially receive emission instruction signals for the three light emitting diodes.

### Claim 10 (depends on 1)

Device according to claim 1, wherein the capture or actuation element associated with each elementary chip is a piezoelectric transducer.