# US 2023/0055348 A1 · Dual plate olet displays

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- Number: US 2023/0055348 A1
- Document ID: US20230055348A1
- Status: Published application
- Kind: A1
- Application number: 17/795,016
- Filed: 2020-02-11
- Published: 2023-02-23
- Earliest claimed: 2020-02-11
- Assignees: Hewlett-Packard Development Company, L.P.
- Applicants: Hewlett-Packard Development Company, L.P.
- Inventors: Hsing-Hung Hsieh; Kuan-Ting Wu; Chi Hao Chang
- Web page: https://patentgrep.com/patent/US20230055348A1

## CPC

- H10K 50/30: Organic light-emitting transistors
- H10K 10/482: {the IGFET comprising multiple separately-addressable gate electrodes}
- H10K 59/128: comprising two independent displays, e.g. for emitting information from two major sides of the display
- H10K 59/1201: {Manufacture or treatment}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An example dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device includes a first plate device having a first substrate; a gate layer adjacent to the first substrate; and a dielectric layer adjacent to the gate layer. A second plate device is connected to the first plate device. The second plate device includes a second substrate; a source/drain layer adjacent to the second substrate; and a stacked active organic layer adjacent to the source/drain layer. The first plate device and the second plate device are to be independently fabricated and joined together to position the stacked active organic layer adjacent to the dielectric layer.

## Claims

### Claim 1

A dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device comprising:
a first plate device comprising:
a first substrate;
a gate layer adjacent to the first substrate; and
a dielectric layer adjacent to the gate layer;
a second plate device connected to the first plate device, wherein the second plate device comprises:
a second substrate;
a source/drain layer adjacent to the second substrate; and
a stacked active organic layer adjacent to the source/drain layer,
wherein the first plate device and the second plate device are to be independently fabricated and joined together to position the stacked active organic layer adjacent to the dielectric layer.

### Claim 2 (depends on 1)

The device of claim 1, wherein the source/drain layer comprises:
a first side comprising a first planar surface contacting the second substrate; and
a second side opposite to the first side, wherein an entirety of the second side comprises a second planar surface contacting the stacked active organic layer.

### Claim 3 (depends on 2)

The device of claim 2, wherein the stacked active organic layer comprises:
an n-type transport layer;
an emitting layer partially surrounding the n-type transport layer; and
a p-type transport layer partially surrounding the emitting layer.

### Claim 4 (depends on 3)

The device of claim 3, wherein the n-type transport layer contacts the second planar surface and the second substrate, wherein the p-type transport layer contacts the second planar surface, and wherein the emitting layer contacts the second planar surface.

### Claim 5 (depends on 3)

The device of claim 3, wherein the emitting layer surrounds three sides of the n-type transport layer, wherein the p-type transport layer surrounds three sides of the emitting layer, and wherein the p-type transport layer surrounds three sides of the n-type transport layer.

### Claim 6 (depends on 2)

The device of claim 2, wherein the stacked active organic layer comprises:
a p-type transport layer;
an emitting layer partially surrounding the p-type transport layer; and
an n-type transport layer partially surrounding the emitting layer.

### Claim 7

A dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device comprising:
a first substrate;
a gate layer contacting the first substrate;
a dielectric layer contacting the gate layer;
a stacked active organic layer contacting the dielectric layer;
a pair of source electrodes contacting the stacked active organic layer;
a drain electrode contacting the stacked active organic layer, wherein the in electrode is aligned and spaced apart from the pair of source electrodes; and
a second substrate contacting the pair of source electrodes, the drain electrode, and a portion of the stacked active organic layer,
wherein the first substrate, the gate layer, and the dielectric layer are fabricated together prior to connecting the dielectric layer to the stacked active organic layer.

### Claim 8 (depends on 7)

The device of claim 7, wherein each side of the pair of source electrodes and the drain electrode is planar, and wherein a gap between the drain electrode and a source electrode of the pair of source electrodes is less than 3 μm.

### Claim 9 (depends on 8)

The device of claim 8, wherein the stacked active organic layer comprises:
an n-type transport layer that fills the gap and contacts the second substrate;
an emitting layer partially surrounding the n-type transport layer; and
a p-type transport layer partially surrounding the emitting layer, wherein the p-type transport layer contacts the dielectric layer.

### Claim 10 (depends on 8)

The device of claim 8, wherein the stacked active organic layer comprises:
a p-type transport layer that fills the gap and contacts the second substrate;
an emitting layer partially surrounding the p-type transport layer; and
an n-type transport layer partially surrounding the emitting layer, wherein the n-type transport layer contacts the dielectric layer.

### Claim 11

A method of manufacturing a semiconductor device, the method comprising:
forming a first Organic Light-Emitting Field-Effect Transistor (OLET) display device;
forming a second OLET display device independently of the first OLET display device; and
attaching the first OLET display device to the second OLET display device.

### Claim 12 (depends on 11)

The method of claim 11, wherein forming the first OLET display device comprises:
providing a first substrate;
depositing a gate layer on the first substrate; and
depositing a dielectric layer on the gate layer.

### Claim 13 (depends on 12)

The method of claim 12, wherein forming the second OLET display device comprises:
providing a second substrate;
depositing a source/drain layer on the second substrate;
patterning the source/drain layer such that each surface of patterned source and drain electrodes are planar; and
depositing a stacked active organic layer on the source/drain layer.

### Claim 14 (depends on 13)

The method of claim 13, wherein depositing the stacked active organic layer comprises:
depositing an n-type transport layer that fills gaps in the patterned source/drain layer, wherein the n-type transport layer contacts the second substrate and source and drain electrodes in the source/drain layer;
depositing an emitting layer on the n-type transport layer, wherein the emitting layer contacts source electrodes in the source/drain layer; and
depositing a p-type transport layer on the emitting layer, wherein the p-type transport layer contacts the source electrodes in the source/drain layer.

### Claim 15 (depends on 13)

The method of claim 13, wherein depositing the stacked active organic layer comprises:
depositing a p-type transport layer that fills gaps in the patterned source/drain layer, wherein the p-type transport layer contacts the second substrate and source and drain electrodes in the source/drain layer;
depositing an emitting layer on the p-type transport layer, wherein the emitting layer contacts source electrodes in the source/drain layer; and
depositing an n-type transport layer on the emitting layer, wherein the n-type transport layer contacts the source electrodes in the source/drain layer.