# US 2023/0054881 A1 · Solid-State Quantum Memory

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- Number: US 2023/0054881 A1
- Document ID: US20230054881A1
- Status: Published application
- Kind: A1
- Application number: 17/799,560
- Filed: 2020-03-09
- Published: 2023-02-23
- Earliest claimed: 2020-03-09
- Assignees: Nippon Telegraph and Telephone Corporation
- Applicants: Nippon Telegraph and Telephone Corporation
- Inventors: Ryuichi Ota; Takehiko Tawara; Hajime Okamoto; Hiroshi Yamaguchi
- Web page: https://patentgrep.com/patent/US20230054881A1

## CPC

- H10N 30/20: with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N 30/2042: {Cantilevers, i.e. having one fixed end}
- G06N 10/40: Physical realisations or architectures of quantum processors or components for manipulating qubits, e.g. qubit coupling or qubit control
- H10B 99/10: {Memory cells having a cross-point geometry}
- H10N 30/093: Forming inorganic materials
- H10N 30/802: {Circuitry or processes for operating piezoelectric or electrostrictive devices not otherwise provided for, e.g. drive circuits}
- H10N 30/87: Electrodes or interconnections, e.g. leads or terminals
- H10N 30/88: Mounts; Supports; Enclosures; Casings
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- G06N: COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
- H10B: ELECTRONIC MEMORY DEVICES

## Abstract

A solid-state quantum memory includes a vibrator supported in a displaceable (vibratable) manner on a substrate and a vibration exciter configured to excite the vibrator to vibrate. A rare-earth element is introduced into the vibrator and the introduced rare-earth element forms an electronic two-level system in the vibrator. The vibrator is supported on the substrate by a support. The substrate including a piezoelectric element formed from a piezoelectric material, as well as a first electrode and a second electrode formed by sandwiching the piezoelectric element, serves as the vibration exciter.

## Claims

### Claim at position 1

1-6. (canceled)

### Claim 7

A solid-state quantum memory comprising:
a vibrator supported in a displaceable manner on a substrate, the vibrator comprising a rare-earth element provided therein and having an electronic two-level system; and
a vibration exciter configured to excite the vibrator to vibrate.

### Claim 8 (depends on 7)

The solid-state quantum memory according to claim 7, wherein the rare-earth element is introduced into the vibrator in an ionic state.

### Claim 9 (depends on 8)

The solid-state quantum memory according to claim 8, wherein the rare-earth element includes an energy level having Kramers degeneracy in the ionic state.

### Claim 10 (depends on 7)

The solid-state quantum memory according to claim 7, wherein the vibrator comprises a cantilevered beam structure.

### Claim 11 (depends on 7)

The solid-state quantum memory according to claim 7, wherein the vibrator comprises a doubly supported beam structure.

### Claim 12 (depends on 7)

The solid-state quantum memory according to claim 7, wherein the vibration exciter comprises a piezoelectric material.

### Claim 13

A solid-state quantum memory comprising:
a substrate comprising a piezoelectric element provided between a first electrode and a second electrode;
a support provided on the substrate; and
a vibrator provided on the support, wherein the vibrator comprises a rare-earth element provided therein and has an electronic two-level system, and wherein the substrate is configured to receive an electrical signal and excite the vibrator to vibrate in response to the electrical signal.

### Claim 14 (depends on 13)

The solid-state quantum memory according to claim 13, wherein the rare-earth element is introduced into the vibrator in an ionic state.

### Claim 15 (depends on 14)

The solid-state quantum memory according to claim 14, wherein the rare-earth element includes an energy level having Kramers degeneracy in the ionic state.

### Claim 16 (depends on 13)

The solid-state quantum memory according to claim 13, wherein the rare-earth element comprises erbium, neodynium, or ytterbium.

### Claim 17 (depends on 13)

The solid-state quantum memory according to claim 13, wherein the vibrator comprises a cantilevered beam structure.

### Claim 18 (depends on 13)

The solid-state quantum memory according to claim 13, wherein the support comprises a first support and a second support, and wherein a first end of the vibrator is provided on the first support and a second end of the vibrator is provided on the second support.

### Claim 19

A method of forming a solid-state quantum memory, the method comprising:
dispersing a rare-earth element into a vibrator material to form a vibrator having an electronic two-level system; and
providing the vibrator on a substrate, wherein the substrate can excite the vibrator to vibrate.

### Claim 20 (depends on 19)

The method according to claim 19, wherein the rare-earth element is dispersed into the vibrator in an ionic state.

### Claim 21 (depends on 20)

The method according to claim 20, wherein the rare-earth element includes an energy level having Kramers degeneracy in the ionic state.

### Claim 22 (depends on 19)

The method according to claim 19, wherein the vibrator is provided on a support on the substrate, and wherein the vibrator and the support are integrally formed.

### Claim 23 (depends on 22)

The method according to claim 22, wherein the vibrator and the support have a cantilevered beam structure.

### Claim 24 (depends on 19)

The method according to claim 19, wherein the vibrator is provided on a first support and a second support on the substrate, and wherein the vibrator, the first support, and the second support have a doubly supported beam structure.

### Claim 25 (depends on 19)

The method according to claim 19, wherein the substrate comprises a piezoelectric element sandwiched between a first electrode and a second electrode.
