# US 2023/0054580 A1 · Batch type substrate processing apparatus and method of manufacturing semiconductor device using the same

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- Number: US 2023/0054580 A1
- Document ID: US20230054580A1
- Status: Published application
- Kind: A1
- Application number: 17/826,901
- Filed: 2022-05-27
- Published: 2023-02-23
- Earliest claimed: 2021-08-17
- Assignees: Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Sangyub IE; Hyungjoon KIM; Minju LEE; Eunyeoung CHOI
- Web page: https://patentgrep.com/patent/US20230054580A1

## CPC

- C23C 16/45544: {characterized by the apparatus}
- H10P 72/3312: {Vertical transfer of a batch of workpieces}
- C23C 16/4409: {characterised by sealing means}
- C23C 16/45546: {specially adapted for a substrate stack in the ALD reactor}
- C23C 16/45578: {Elongated nozzles, tubes with holes}
- H10P 14/6339: {deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD}
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A substrate processing apparatus and a method of manufacturing a semiconductor device are provided. The substrate processing apparatus includes a processing chamber; a boat configured to stack substrates; a gas nozzle including a nozzle region and a fastening region; a gas inlet including an insert portion; and an adapter coupling the gas inlet and the gas nozzle. The fastening region includes a first lower region; and a second lower region having a protruding portion protruding outwardly from an outer side surface of the first lower region. The adapter includes a lower pedestal; a lower fastening portion on the lower pedestal and contacting at least a lower surface of the protruding portion; a gasket between a portion of the lower pedestal and a portion of the lower fastening portion; an upper fastening portion contacting at least an upper surface of the protruding portion; a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion; and a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole.

## Claims

### Claim 1

A substrate processing apparatus comprising:
a processing chamber;
a boat configured to stack a plurality of substrates spaced apart from each other in a vertical direction, and to move into the processing chamber by vertical driving;
a gas nozzle including a nozzle region disposed in the processing chamber, the nozzle region including gas injection holes disposed in a portion of the gas nozzle facing toward the center of the processing chamber and toward where the boat is configured to be located, and a fastening region disposed below the nozzle region;
a gas inlet including an insert portion inserted into a gas passage in the fastening region; and
an adapter coupling the gas inlet and the gas nozzle,
wherein the fastening region comprises:
a first lower region; and
a second lower region disposed on the first lower region and having a protruding portion protruding outwardly from an outer side surface of the first lower region,
wherein the adapter comprises:
a lower pedestal;
a lower fastening portion disposed on the lower pedestal and contacting at least a lower surface of the protruding portion;
a gasket disposed between a portion of the lower pedestal and a portion of the lower fastening portion;
an upper fastening portion contacting at least an upper surface of the protruding portion;
a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion; and
a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole.

### Claim 2 (depends on 1)

The substrate processing apparatus of claim 1, wherein the lower pedestal comprises a first pedestal and a second pedestal,
wherein the first pedestal comprises a pedestal platform coupled to the gas inlet, and an extension portion extending upwardly from the pedestal platform to define a cavity,
the second pedestal is disposed on the extension portion and protrudes outwardly from the first pedestal,
the second pedestal comprises a first groove recessed in an upper surface,
the lower fastening portion comprises an upper surface contacting a lower surface of the protruding portion, a lower surface opposite to the upper surface of the lower fastening portion, and a second groove recessed in the lower surface of the lower fastening portion, and
the gasket fills a space between the first groove and the second groove and contacts the second pedestal and the lower fastening portion.

### Claim 3 (depends on 2)

The substrate processing apparatus of claim 2, wherein at least a portion of the gasket has a recess shape.

### Claim 4 (depends on 1)

The substrate processing apparatus of claim 1, wherein the gasket has a ring shape, and the gasket has an inner side surface, an outer side surface, an upper surface, and a lower surface, and
wherein the upper surface of the gasket comprises at least one upper recess, and the lower surface of the gasket comprises at least one lower recess.

### Claim 5 (depends on 4)

The substrate processing apparatus of claim 4, wherein the at least one upper recess has a “V” shape, and the at least one lower recess is mirror symmetric with the at least one upper recess.

### Claim 6 (depends on 4)

The substrate processing apparatus of claim 4, wherein the at least one upper recess has a “U” shape, and the at least one lower recess is mirror symmetric with the at least one upper recess.

### Claim 7 (depends on 4)

The substrate processing apparatus of claim 4, wherein:
a maximum horizontal width of the at least one upper recess is about 0.65 mm to about 1 mm,
a horizontal distance from an upper end of the inner side surface to the at least one upper recess is about 0.3 mm to about 0.5 mm,
a horizontal distance from an upper end of the outer side surface to the at least one upper recess is about 0.3 mm to about 0.5 mm, and
a minimum distance between the at least one upper recess and the at least one lower recess is about 0.5 mm to about 0.8 mm.

### Claim 8 (depends on 1)

The substrate processing apparatus of claim 1, wherein the upper fastening portion comprises a first upper fastening portion contacting the upper surface of the protruding portion, and a second upper fastening portion extending from the first upper fastening portion and contacting a portion of a side surface of the protruding portion.

### Claim 9 (depends on 1)

The substrate processing apparatus of claim 1, wherein, at a height level at which the gasket is located, a distance between the gasket and the gas inlet is shorter than a distance between the fastening unit and the gas inlet.

### Claim 10 (depends on 1)

The substrate processing apparatus of claim 1, wherein the gas nozzle comprises a quartz material, and the adapter comprises at least one corrosion-resistant metal alloy.

### Claim 11 (depends on 1)

The substrate processing apparatus of claim 1, wherein the gasket comprises a material softer than a material of the lower pedestal and softer than a material of the lower fastening portion.

### Claim 12 (depends on 1)

The substrate processing apparatus of claim 1, wherein the fastening region of the gas nozzle further comprises an upper region on the second lower region,
wherein the upper region comprises a first upper region and a second upper region on the first upper region,
wherein the first upper region has a substantially vertical outer side surface,
wherein the second upper region has an inclined outer side surface extending from the outer side surface of the first upper region to gradually decrease in width, and
wherein the protruding portion of the second lower region of the gas nozzle protrudes outwardly from the outer side surface of the first upper region.

### Claim 13 (depends on 1)

The substrate processing apparatus of claim 1, wherein the fastening unit comprises a rod including a portion inserted into the hole.

### Claim 14

A substrate processing apparatus comprising:
a processing chamber;
a boat configured to stack a plurality of substrates to be spaced apart from each other in a vertical direction, and configured to be moved into the processing chamber by vertical driving; and
a plurality of gas supply units extending into the processing chamber from an outside of the processing chamber,
wherein the plurality of gas supply units comprises a first gas supply unit and a second gas supply unit,
wherein the first gas supply unit comprises a first gas inlet extending into the processing chamber from the outside of the processing chamber and having a shape including a horizontal portion and a vertical portion, a first gas nozzle on the first gas inlet, and a first adapter connecting the first gas inlet and the first gas nozzle, and
the second gas supply unit comprises a second gas inlet extending into the processing chamber from the outside of the processing chamber and having a shape including a horizontal portion and a vertical portion, a second gas nozzle on the second gas inlet, and a second adapter connecting the second gas inlet and the second gas nozzle,
wherein a diameter of the first gas inlet is greater than a diameter of the second gas inlet, and
wherein the first adapter and the second adapter have different structures from each other.

### Claim 15 (depends on 14)

The substrate processing apparatus of claim 14, wherein the first adapter connects the first gas inlet and the first gas nozzle using ‘n’ components, each formed of a single unitary integrated piece of material, and the second adapter connects the second gas inlet and the second gas nozzle using ‘m’ components, each formed of a single unitary integrated piece of material,
where ‘m’ is a natural number, and ‘n’ is a natural number, greater than ‘m.’

### Claim 16 (depends on 14)

The substrate processing apparatus of claim 14, wherein the first gas nozzle comprises a first nozzle region disposed in the processing chamber, the first nozzle region including first gas injection holes disposed in a portion of the first gas nozzle facing toward the center of the processing chamber toward where the boat is configured to be located, and a first fastening region disposed below the first nozzle region,
wherein the first gas inlet comprises a first insertion portion inserted into a gas passage in the first fastening region of the first gas nozzle,
wherein the first fastening region comprises:
a first lower region; and
a second lower region disposed on the first lower region and having a protruding portion protruding outwardly from an outer side surface of the first lower region, and
wherein the first adapter comprises:
a lower pedestal disposed below the first fastening region and coupled to the first gas inlet;
a lower fastening portion disposed on the lower pedestal and contacting at least a lower surface of the protruding portion;
a gasket disposed between a portion of the lower pedestal and a portion of the lower fastening portion;
an upper fastening portion contacting at least an upper surface of the protruding portion;
a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion; and
a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole.

### Claim 17 (depends on 16)

The substrate processing apparatus of claim 16, wherein the gasket comprises a material, softer than a material of the lower pedestal and a material of the lower fastening portion.

### Claim 18 (depends on 16)

The substrate processing apparatus of claim 16, wherein the lower pedestal has a first groove in an upper surface thereof, and the lower fastening portion has a second groove in a lower surface thereof,
wherein the gasket is disposed between the first groove and the second groove, and
wherein at a height level at which the gasket is located, a distance between the gasket and the first gas inlet is less than a distance between the fastening unit and the first gas inlet.

### Claim 19 (depends on 14)

The substrate processing apparatus of claim 14, wherein the second gas nozzle comprises a second nozzle region disposed in the processing chamber, the second nozzle region including second gas injection holes disposed in a portion of the second gas nozzle facing toward the center of the processing chamber and toward where the boat is configured to be located, and a second fastening region disposed below the second nozzle region,
wherein the second gas inlet comprises a second insertion portion inserted into a gas passage in the second fastening region of the second gas nozzle,
wherein the second fastening region comprises a protruding portion disposed on an outside of an upper region of the second fastening region, and
wherein the second adapter comprises a groove coupled to the second gas inlet below the second fastening region, having a cylindrical shape into which the second fastening region is inserted, and coupled to the protruding portion of the second fastening region in the upper region of the second fastening region.

### Claim 20

A method of manufacturing a semiconductor device, comprising:
performing a first semiconductor process on a plurality of substrates to form a first structure on each of the plurality of substrates;
loading the plurality of substrates on which the first semiconductor process has been performed into a batch type substrate processing apparatus including a plurality of gas supply units;
performing a second semiconductor process in which processes are repeatedly performed using the plurality of gas supply units, to form a second structure on each of the plurality of substrates;
unloading the plurality of substrates on which the second semiconductor process has been performed from the batch type substrate processing apparatus; and
performing a third semiconductor process on the plurality of substrates on which the second semiconductor process has been performed,
wherein the batch type substrate processing apparatus comprises a processing chamber and a boat used to stack the plurality of substrates in a manner spaced apart from each other in a vertical direction, wherein the boat is moved into the processing chamber by vertical driving,
wherein the plurality of gas supply units extend into the processing chamber from an outside of the processing chamber,
wherein the plurality of gas supply units comprises a first gas supply unit and a second gas supply unit,
wherein the first gas supply unit comprises a first gas inlet extending into the processing chamber from the outside of the processing chamber and having a shape including a horizontal portion and a vertical portion, a first gas nozzle on the first gas inlet, and a first adapter connecting the first gas inlet and the first gas nozzle,
wherein the first gas nozzle comprises a first nozzle region disposed in the processing chamber and including first gas injection holes disposed to inject gas in a direction from outside the processing chamber toward the boat, and a first fastening region disposed below the first nozzle region,
wherein the first fastening region comprises a first region, and a second region disposed on the first region and having a protruding portion protruding outwardly from an outer side surface of the first region,
wherein the first adapter comprises a lower pedestal, a lower fastening portion disposed on the lower pedestal and contacting at least a lower surface of the protruding portion, a gasket disposed between a portion of the lower pedestal and a portion of the lower fastening portion, an upper fastening portion contacting at least an upper surface of the protruding portion, a hole passing through the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion, and a fastening unit coupling the lower pedestal, the lower fastening portion, the protruding portion, and the upper fastening portion through the hole, and
wherein the performing a second semiconductor process comprises injecting a first process gas including a corrosive gas toward the plurality of substrates loaded into the processing chamber through the first gas nozzle of the first gas supply unit.

### Claim at position 21

21-24. (canceled)