# US 2023/0054259 A1 · Semiconductor device with silicon nitride passivation film

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- Number: US 2023/0054259 A1
- Document ID: US20230054259A1
- Status: Published application
- Kind: A1
- Application number: 17/959,865
- Filed: 2022-10-04
- Published: 2023-02-23
- Earliest claimed: 2019-09-04
- Assignees: Sumitomo Electric Industries, Ltd.
- Applicants: Sumitomo Electric Industries, Ltd.
- Inventors: Kazuhide SUMIYOSHI; Masaya OKADA; Kazutaka INOUE; Takumi YONEMURA
- Web page: https://patentgrep.com/patent/US20230054259A1

## CPC

- H10D 30/4755: {having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs}
- H10P 14/69433: {the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz}
- H10D 30/015: {of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT}
- H10D 30/47: having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10P 14/3416: {Nitrides}
- H10P 14/6334: {using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition (deposition by physical ablation of a target H10P14/6329)}
- H10P 14/6504: {In-situ cleaning}
- H10P 14/6682: {the compound being a silane, e.g. disilane, methylsilane or chlorosilane}
- H10D 64/256: {for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673)}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a substrate, a semiconductor stacking portion formed on the substrate, a silicon nitride passivation film covering the surface of the semiconductor stacking portion, and oxygen atoms existing at an interface between the silicon nitride passivation film and the semiconductor stacking portion. The semiconductor stacking portion includes a plurality of nitride semiconductor layers. The interfacial oxygen content at the passivation film and stacking portion interface is 0.6×1015 oxygen atoms/cm2 or less.

## Claims

### Claim at position 1

1-7. (canceled)

### Claim 8

A semiconductor device comprising:
a substrate;
a semiconductor stacking portion formed on the substrate, the semiconductor stacking portion including a plurality of nitride semiconductor layers;
a silicon nitride passivation film covering a surface of the semiconductor stacking portion; and
oxygen atoms existing at an interface between the silicon nitride passivation film and the semiconductor stacking portion;
wherein an interfacial oxygen content in oxygen atoms at the interface is 0.6×1015 atom/cm2 or less.

### Claim 9 (depends on 8)

The semiconductor device according to claim 8, wherein the oxygen atoms exist in silicon oxynitride (Si2N2O).

### Claim at position 4

10-13. (canceled)