# US 2023/0053847 A1 · Pixel and organic light emitting display device having the same

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- Number: US 2023/0053847 A1
- Document ID: US20230053847A1
- Status: Published application
- Kind: A1
- Application number: 18/045,761
- Filed: 2022-10-11
- Published: 2023-02-23
- Earliest claimed: 2017-03-30
- Assignees: Samsung Display Co., Ltd.
- Applicants: Samsung Display Co., Ltd.
- Inventors: DONGWOO KIM; Sunghwan Kim; Kyoungju Shin; Cheol-Gon Lee; Sang-Uk Lim
- Web page: https://patentgrep.com/patent/US20230053847A1

## CPC

- G09G 3/3233: with pixel circuitry controlling the current through the light-emitting element
- G01N 11/02: by measuring flow of the material
- G01N 27/4161: {measuring the voltage and using a constant current supply, e.g. chronopotentiometry}
- G01N 27/4166: {measuring a particular property of an electrolyte}
- G01N 33/18: Water
- G09G 3/3266: Details of drivers for scan electrodes
- G09G 3/3283: in which the data driver supplies a variable data current for setting the current through, or the voltage across, the light-emitting elements
- H10D 86/421: {having a particular composition, shape or crystalline structure of the active layer}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1216: {the pixel elements being capacitors}
- H10K 59/131: Interconnections, e.g. wiring lines or terminals
- G09G 2300/0426: Layout of electrodes and connections
- G09G 2300/0819: used for counteracting undesired variations, e.g. feedback or autozeroing
- G09G 2300/0823: used to establish symmetry in driving, e.g. with polarity inversion
- G09G 2300/0852: being a dynamic memory with more than one capacitor
- G09G 2300/0861: with additional control of the display period without amending the charge stored in a pixel memory, e.g. by means of additional select electrodes
- G09G 2320/0214: with crosstalk due to leakage current of pixel switch in active matrix panels
- G09G 2320/0219: Reducing feedthrough effects in active matrix panels, i.e. voltage changes on the scan electrode influencing the pixel voltage due to capacitive coupling
- G09G 2320/0238: Improving the black level
- H10D 30/6731: {Top-gate only TFTs}
- H10D 30/6745: {Polycrystalline or microcrystalline silicon}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/441: {Interconnections, e.g. scanning lines}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10K 59/1213: {the pixel elements being TFTs}
- G09G: ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION (arrangements for transferring data between digital computers and displays G06F3/14; static indicating arrangements comprising an association of a number of separate sources or light control cells G09F9/00; static indicating arrangements comprising integral associations of a number of light sources H01J, H01K, H10H, H05B33/12; scanning, transmission or reproduction of documents or the like, e.g. facsimile transmission, details thereof H04N1/00)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

An organic light emitting display device includes a plurality of pixels. Each of the pixels includes an organic light emitting diode, first to third transistors, a storage capacitor, and a first capacitor. The second transistor includes a gate electrode receiving a first scan signal, a first electrode receiving a data signal, and a second electrode connected to a first electrode of the first transistor. The third transistor includes a gate electrode receiving a second scan signal, a first electrode connected to a second electrode of the first transistor, and a second electrode connected to a gate electrode of the first transistor. The storage capacitor includes a first electrode receiving a power voltage and a second electrode connected to the gate electrode of the first transistor. The first capacitor includes a first electrode connected to the gate electrode of the third transistor and a second electrode receiving the power voltage.

## Claims

### Claim 1

An organic light emitting display device, comprising;
a first supply voltage line;
a second supply voltage line;
an initialization voltage line;
an organic light emitting diode;
a first transistor, a second transistor, and a third transistor electrically connected in series between the first supply voltage line and the second supply voltage line, wherein the first transistor includes a first portion of a first active pattern made of a first semiconductor material, the second transistor includes a second portion of the first active pattern, and the third transistor includes a third portion of the first active pattern;
a fourth transistor electrically connected between a data line and a first electrode of the second transistor, wherein the fourth transistor includes a fourth portion of the first active pattern;
a fifth transistor electrically connected between a gate electrode of the second transistor and a second electrode of the second transistor, wherein the fifth transistor includes a first portion of a second active pattern made of a second semiconductor material that differs from the first semiconductor material; and
a capacitor electrically connected to the gate electrode of the second transistor,
wherein the second active pattern is electrically connected to the gate electrode of the second transistor through a first connector,
wherein the second active pattern is electrically connected to the first active pattern through a second connector, and
wherein the second active pattern is electrically connected to the initialization voltage line through a third connector.

### Claim 2 (depends on 1)

The organic light emitting display device of claim 1, wherein the first semiconductor material comprises a polysilicon.

### Claim 3 (depends on 2)

The organic light emitting display device of claim 2, wherein the second semiconductor material comprises an oxide semiconductor.

### Claim 4 (depends on 3)

The organic light emitting display device of claim 3, wherein the first connector and the second connector are made of a same material.

### Claim 5 (depends on 1)

The organic light emitting display device of claim 1, further comprising:
a sixth transistor electrically connected between an anode of the organic light emitting diode and the initialization voltage line.

### Claim 6 (depends on 5)

The organic light emitting display device of claim 5, wherein the sixth transistor includes a second portion of the second active pattern.

### Claim 7 (depends on 5)

The organic light emitting display device of claim 5, further comprising;
a seventh transistor electrically connected between the gate electrode of the second transistor and the initialization voltage line.

### Claim 8 (depends on 7)

The organic light emitting display device of claim 7, wherein the seventh transistor includes a third portion of the second active pattern.

### Claim 9 (depends on 1)

The organic light emitting display device of claim 1, wherein the second portion of the first active pattern is curved under the gate electrode of the second transistor.

### Claim 10

An organic light emitting display device, comprising;
a first supply voltage line;
a second supply voltage line;
an initialization voltage line;
an organic light emitting diode;
a first transistor, a second transistor, and a third transistor electrically connected in series between the first supply voltage line and the second supply voltage line, wherein the first transistor includes a first portion of a first active pattern made of a first semiconductor material, the second transistor includes a second portion of the first active pattern, and the third transistor includes a third portion of the first active pattern;
a capacitor electrically connected to the gate electrode of the second transistor;
a fourth transistor that includes a portion of a second active pattern that differs from the first active pattern,
wherein the second active pattern is electrically connected to a gate electrode of the second transistor through a first connector,
wherein the second active pattern is made of a second semiconductor material that differs from the first semiconductor material and is electrically connected to the first active pattern through a second connector, and
wherein the second active pattern is electrically connected to the initialization voltage line through a third connector.