# US 2023/0053791 A1 · Llc resonant converting apparatus

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- Number: US 2023/0053791 A1
- Document ID: US20230053791A1
- Status: Published application
- Kind: A1
- Application number: 17/497,916
- Filed: 2021-10-09
- Published: 2023-02-23
- Earliest claimed: 2021-08-19
- Assignees: Asian Power Devices Inc.
- Applicants: Asian Power Devices Inc.
- Inventors: Tsung-Liang HUNG
- Web page: https://patentgrep.com/patent/US20230053791A1

## CPC

- H02M 3/01: {Resonant DC/DC converters}
- H02M 3/33576: {having at least one active switching element at the secondary side of an isolation transformer}
- H02M 1/0058: {by employing soft switching techniques, i.e. commutation of transistors when applied voltage is zero or when current flow is zero (using an auxiliary actively switched resonant commutation circuit connected to an intermediate DC voltage or between two push-pull branches of an inverter bridge H02M7/4811; in resonant inverters H02M7/4815; in inverters operating from a resonant DC source H02M7/4826)}
- H02M 3/33571: {Half-bridge at primary side of an isolation transformer}
- H02M 3/33573: {Full-bridge at primary side of an isolation transformer}
- H02M 1/0022: {the disturbance parameters being input voltage fluctuations}
- Y02B 70/10: Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)
- Y02B: CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS

## Abstract

An LLC resonant converting apparatus determines to operate as a half-bridge LLC resonant converter or a full-bridge LLC resonant converter based on the magnitude of the input voltage. The present disclosure can solve the problem that the input voltage range of the LLC resonant converter is not wide enough.

## Claims

### Claim 1

An LLC resonant converting apparatus comprising:
a processor; and
an LLC resonant converter electrically connected to the processor,
wherein the LLC resonant converter is configured to receive an input voltage; when the input voltage is greater than a predetermined voltage, the processor is configured to control the LLC resonant converter to operate in a half-bridge operating mode, so that the LLC resonant converter is configured to operate as a half-bridge LLC resonant converter; when the input voltage is less than or equal to the predetermined voltage, the processor is configured to control the LLC resonant converter to operate in a full-bridge operating mode, so that the LLC resonant converter is configured to operate as a full-bridge LLC resonant converter.

### Claim 2 (depends on 1)

The LLC resonant converting apparatus of claim 1, further comprising:
a voltage detector electrically connected to the processor and the LLC resonant converter,
wherein the voltage detector is configured to detect the input voltage to inform the processor of the input voltage, so that the processor is configured to learn a magnitude of the input voltage to determine whether the LLC resonant converter is configured to operate in the half-bridge operating mode or the full-bridge operating mode.

### Claim 3 (depends on 2)

The LLC resonant converting apparatus of claim 2, wherein the LLC resonant converter comprises:
a first metal oxide semiconductor field effect transistor electrically connected to the processor and the voltage detector;
a second metal oxide semiconductor field effect transistor electrically connected to the processor and the first metal oxide semiconductor field effect transistor;
a third metal oxide semiconductor field effect transistor electrically connected to the processor, the first metal oxide semiconductor field effect transistor and the voltage detector; and
a fourth metal oxide semiconductor field effect transistor electrically connected to the processor and the third metal oxide semiconductor field effect transistor.

### Claim 4 (depends on 3)

The LLC resonant converting apparatus of claim 3, wherein when the LLC resonant converter is configured to operate in the half-bridge operating mode, the LLC resonant converter is configured to alternately operate in a half-bridge first state and a half-bridge second state; when the LLC resonant converter is configured to operate in the half-bridge first state, the processor is configured to turn on the first metal oxide semiconductor field effect transistor and the fourth metal oxide semiconductor field effect transistor, and turn off the second metal oxide semiconductor field effect transistor and the third metal oxide semiconductor field effect transistor; when the LLC resonant converter is configured to operate in the half-bridge second state, the processor is configured to turn off the first metal oxide semiconductor field effect transistor, the third metal oxide semiconductor field effect transistor and the fourth metal oxide semiconductor field effect transistor, and turn on the second metal oxide semiconductor field effect transistor.

### Claim 5 (depends on 4)

The LLC resonant converting apparatus of claim 4, wherein when the LLC resonant converter is configured to operate in the full-bridge operating mode, the LLC resonant converter is configured to alternately operate in a full-bridge first state and a full-bridge second state; when the LLC resonant converter is configured to operate in the full-bridge first state, the processor is configured to turn on the first metal oxide semiconductor field effect transistor and the fourth metal oxide semiconductor field effect transistor, and turn off the second metal oxide semiconductor field effect transistor and the third metal oxide semiconductor field effect transistor; when the LLC resonant converter is configured to operate in the full-bridge second state, the processor is configured to turn off the first metal oxide semiconductor field effect transistor and the fourth metal oxide semiconductor field effect transistor, and turn on the second metal oxide semiconductor field effect transistor and the third metal oxide semiconductor field effect transistor.

### Claim 6 (depends on 5)

The LLC resonant converting apparatus of claim 5, wherein the LLC resonant converter further comprises:
a resonant capacitor electrically connected to the first metal oxide semiconductor field effect transistor and the second metal oxide semiconductor field effect transistor;
a resonant inductor electrically connected to the resonant capacitor; and
a magnetizing inductor electrically connected to the resonant inductor, the third metal oxide semiconductor field effect transistor and the fourth metal oxide semiconductor field effect transistor.

### Claim 7 (depends on 6)

The LLC resonant converting apparatus of claim 6, wherein the LLC resonant converter further comprises:
a transformer electrically connected to the resonant inductor, the third metal oxide semiconductor field effect transistor, the fourth metal oxide semiconductor field effect transistor and the magnetizing inductor;
a first diode electrically connected to the transformer;
a second diode electrically connected to the transformer and the first diode;
a third diode electrically connected to the transformer and the first diode;
a fourth diode electrically connected to the transformer and the third diode; and
an output-end capacitor electrically connected to the first diode and the third diode.

### Claim 8 (depends on 7)

The LLC resonant converting apparatus of claim 7, wherein the LLC resonant converter further comprises:
a primary-side first point electrically connected to the voltage detector, the first metal oxide semiconductor field effect transistor and the third metal oxide semiconductor field effect transistor;
a primary-side second point electrically connected to the second metal oxide semiconductor field effect transistor and the fourth metal oxide semiconductor field effect transistor;
a secondary-side first point electrically connected to the first diode, the third diode and the output-end capacitor; and
a secondary-side second point electrically connected to the second diode, the fourth diode and the output-end capacitor,
wherein the transformer comprises:
a primary-side winding electrically connected to the resonant inductor, the third metal oxide semiconductor field effect transistor, the fourth metal oxide semiconductor field effect transistor and the magnetizing inductor; and
a secondary-side winding electrically connected to the first diode, the third diode and the fourth diode.

### Claim 9 (depends on 8)

The LLC resonant converting apparatus of claim 8, wherein when the LLC resonant converter is configured to operate in the half-bridge first state, a primary-side current flows through the primary-side first point, the first metal oxide semiconductor field effect transistor, the resonant capacitor, the resonant inductor, the primary-side winding, the fourth metal oxide semiconductor field effect transistor and the primary-side second point, and a secondary-side current flows through the secondary-side second point, the fourth diode, the secondary-side winding, the first diode and the secondary-side first point;
wherein when the LLC resonant converter is configured to operate in the half-bridge second state, the primary-side current flows between the resonant inductor, the resonant capacitor, the second metal oxide semiconductor field effect transistor, a parasitic diode of the fourth metal oxide semiconductor field effect transistor and the primary-side winding, and the secondary-side current flows through the secondary-side second point, the second diode, the secondary-side winding, the third diode and the secondary-side first point.

### Claim 10 (depends on 9)

The LLC resonant converting apparatus of claim 9, wherein the LLC resonant converter is configured to operate in the full-bridge first state, the primary-side current flows through the primary-side first point, the first metal oxide semiconductor field effect transistor, the resonant capacitor, the resonant inductor, the primary-side winding, the fourth metal oxide semiconductor field effect transistor and the primary-side second point, and the secondary-side current flows through the secondary-side second point, the fourth diode, the secondary-side winding, the first diode and the secondary-side first point;
wherein when the LLC resonant converter is configured to operate in the full-bridge second state, the primary-side current flows through the primary-side first point, the third metal oxide semiconductor field effect transistor, the primary-side winding, the resonant inductor, the resonant capacitor, the second metal oxide semiconductor field effect transistor and the primary-side second point, and the secondary-side current flows through the secondary-side second point, the second diode, the secondary-side winding, the third diode and the secondary-side first point.